|
|
Datasheet RU40231Q2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RU40231Q2 | N-Channel Advanced Power MOSFET RU40231Q2
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/230A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =3.5mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• D |  Ruichips | mosfet |
RU4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | RU4 | Silicon And Fast Recovery Rectifiers RoHS
Silicon And Fast Recovery Rectifiers
TYPE
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified sine-wave
Voltage Current Superimposed
Maximum Forward Voltage
Maximum
DC
Reverse
Current TA=25 OC
Typical Reverse Recovery
Time
Package Style
T  WEJ  | ||
| 2 | RU4 | Fast-Recovery Rectifier Diodes
Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
( ) is with Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR IR (H) (µA) (µA) VR = VRM VR = VRM max Ta =100°C max
Others
IFSM (A)
50Hz Half-cycle  Sanken electric | ||
| 3 | RU4 | HIGH EFFICIENCY ECTIFIERS BL
FEATURES
Low cost
GALAXY ELECTRICAL
RU4Y(Z) --- RU4YX(Z)
VOLTAGE RANGE: 100 --- 1000 V CURRENT: 2.5 -- 4.0 A
HIGH EFFICIENCY ECTIFIERS
DO - 27
Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents www.DataS  Galaxy Semi-Conductor | ||
| 4 | RU40120M | N-Channel Advanced Power MOSFET RU40120M
N-Channel Advanced Power MOSFET
Features
• 40V/120A,
RDS (ON) =2.7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC/DC Converters Ruichips | ||
| 5 | RU40120R | N-Channel Advanced Power MOSFET RU40120R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/120A, RDS (ON) =3.5mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-220
Applications
• DC-DC Con Ruichips | ||
| 6 | RU40120S | N-Channel Advanced Power MOSFET RU40120S
N-Channel Advanced Power MOSFET
Features
• 40V/120A,
RDS (ON) =3.5mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
D
Applications
• DC-DC Converters
G S Ruichips | ||
| 7 | RU40130R | N-Channel Advanced Power MOSFET RU40130R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/135A, RDS (ON) =3.2mΩ (Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-220
Applications
• Switchin Ruichips |
| Esta página es del resultado de búsqueda del RU40231Q2. Si pulsa el resultado de búsqueda de RU40231Q2 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |