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PDF SM6012NSUB Data sheet ( Hoja de datos )
| Número de pieza | SM6012NSUB | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM6012NSUB
®
N-Channel Enhancement Mode MOSFET
Features
Pin Configuration
· 60V/41A,
RDS(ON) = 19.5mW (max.) @ VGS = 10V
RDS(ON )= 23.5mW (max.) @ VGS = 4.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
S
D
G
Top View of TO-251
D
· DC-DCConverter.
· Motor Control.
· Power Tools.
· Load Switching.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM6012NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
UB : TO-251
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (80ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM6012NS UB: SM6012N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2013
1
www.sinopowersemi.com
1 page  
SM6012NSUB
®
Typical Operating Characteristics (Cont.)
Output Characteristics
80
V =4,5,6,7,8,9,10V
70 GS
60
3.5V
50
40
30
20 3V
10
2.5V
0
0123456
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
35
30
25
V =4.5V
20 GS
15 VGS=10V
10
5
0
0 10 20 30 40 50 60
ID - Drain Current (A)
Gate-Source On Resistance
40
IDS=16A
35
30
25
20
15
10
2 3 4 5 6 7 8 9 10
VGS - Gate-Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (oC)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2013
5
www.sinopowersemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SM6012NSUB.PDF ] | |
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