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Número de pieza | SM2A01NSF | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Sinopower | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SM2A01NSF (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! SM2A01NSF/SM2A01NSFP
®
N-Channel Enhancement Mode MOSFET
Features
· 200V/65A,
RDS(ON)= 28mW(max.) @ VGS= 10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
GDS
Top View of TO-220
GDS
Top View of TO-220-FP
D
Applications
· Synchronous Rectification.
· Power Management in Inverter Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM2A01NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
FP : TO-220-FP
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM2A01NS F/FP : SM2A01N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2013
1
www.sinopowersemi.com
1 page SM2A01NSF/SM2A01NSFP
®
Typical Operating Characteristics (Cont.)
Output Characteristics
100
90 VGS= 5.5,6,7,8,9,10V
80
70
60
50 5V
40
30
20
10 4.5V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
36
34
32
30
28
26 VGS=10V
24
22
20
18
16
14
0 20 40 60 80 100
ID- Drain Current (A)
Gate-Source On Resistance
44
IDS=30A
40
36
32
28
24
20
16
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2013
5
www.sinopowersemi.com
5 Page SM2A01NSF/SM2A01NSFP
Classification Profile
®
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2013
11
www.sinopowersemi.com
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet SM2A01NSF.PDF ] |
Número de pieza | Descripción | Fabricantes |
SM2A01NSF | N-Channel Enhancement Mode MOSFET | Sinopower |
SM2A01NSFP | N-Channel Enhancement Mode MOSFET | Sinopower |
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