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PDF SM6A10NSU Data sheet ( Hoja de datos )
| Número de pieza | SM6A10NSU | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM6A10NSU
®
N-Channel Enhancement Mode MOSFET
Features
· 600V/11A,
RDS(ON)= 0.36W(max.) @ VGS= 10V
V @Tj, max=700V (typ.)
DS
· Reliable and Rugged
· Avalanche Rated
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
D
S
G
Top View of TO-252-3
D
Applications
· AC/DC Power Conversion in Switched Mode Power
Supplies (SMPS).
· Uninterruptible Power Supply (UPS),
· Adapter.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM6A10NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM6A10NS U :
SM6A10N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
1
www.sinopowersemi.com
1 page  
SM6A10NSU
®
Typical Operating Characteristics (Cont.)
Output Characteristics
32
28
VGS=10,15V
24
20
16
8V
7V
12
8 6V
4
0
0 5 10 15 20
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
0.6
0.5
0.4
0.3
V =10V
GS
0.2
0.1
0.0
0
5 10 15 20
ID- Drain Current (A)
BVDSS vs Junction Temperature
1.6
IDS=250mA
1.4
1.2
1.0
0.8
0.6
0.4-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Gate Threshold Voltage
1.2
IDS=250mA
1.1
1.0
0.9
0.8
0.7
0.6-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
5
www.sinopowersemi.com
5 Page 
SM6A10NSU
Taping Direction Information
TO-252-3
USER DIRECTION OF FEED
®
Classification Profile
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
11
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11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SM6A10NSU.PDF ] | |
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