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PDF SM2700CSC Data sheet ( Hoja de datos )
| Número de pieza | SM2700CSC | |
| Descripción | Dual Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM2700CSC
®
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
• N-Channel
20V/2A,
RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V
R=
DS(ON)
175mΩ(typ.)
@
V=
GS
2.5V
RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V
• P-Channel
-20V/-1.4A,
R=
DS(ON)
255mΩ(typ.)
@
V=
GS
-4.5V
R=
DS(ON)
400mΩ(typ.)
@
V=
GS
-2.5V
RDS(ON)= 600mΩ(typ.) @ VGS= -1.8V
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
D2
S1
D1
G2
S2
G1
Top View of SOT-23-6
(6)D1
(4) D2
(1)G1
(3) G2
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
(5)S1
N-Channel
(2) S2
P-Channel
SM2700CS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
C : SOT-23-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM2700CS C : K70XX
XX - Lot Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
1
www.sinopowersemi.com
1 page  
SM2700CSC
®
Typical Operating Characteristics (Cont.)
N-Channel
Output Characteristics
8
V = 4,5,6,7,8,9,10V
GS
7
3V
Drain-Source On Resistance
400
V =1.8V
350 GS
6
2.5V
5
4
2V
3
2
1 1.5V
300
V =2.5V
250 GS
200
150 V =4.5V
GS
100
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
50
012345678
ID - Drain Current (A)
Drain-Source On Resistance
350
I =2A
D
300
250
200
150
100
50
1 2 3 4 5 6 7 8 9 10
V - Gate - Source Voltage (V)
GS
Gate Threshold Voltage
1.6
IDS=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
5
www.sinopowersemi.com
5 Page 
SM2700CSC
Package Information
SOT-23-6
D
e
®
SEE
VIEW A
b
e1
c
L
VIEW A
GAUGE PLANE
SEATING PLANE
S SOT-23-6
Y
M
B
MILLIMETERS
INCHES
O
L
MIN.
MAX.
MIN.
MAX.
A-
1.25
- 0.049
A1 0.00
0.05
0.000
0.002
A2 0.90
1.20
0.035
0.047
b 0.30
0.50
0.012
0.020
c 0.08
0.22
0.003
0.009
D 2.70
3.10
0.106
0.122
E 2.60
3.00
0.102
0.118
E1 1.40
1.80
0.055
0.071
e 0.95 BSC
0.037 BSC
e1 1.90 BSC
0.075 BSC
L 0.30
0.60
0.012
0.024
0 0°
8°
0° 8°
Note : 1. Follow JEDEC TO-178 AB.
2. Dimension D and E1 do not include mold flash, protrusions or
gate burrs. Mold flash, protrusion or gate burrs shall not exceed
10 mil per side.
RECOMMENDED LAND PATTERN
0.63
2.4
0.8
0.95
UNIT: mm
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
11
www.sinopowersemi.com
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SM2700CSC.PDF ] | |
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