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PDF SI8481DB Data sheet ( Hoja de datos )
| Número de pieza | SI8481DB | |
| Descripción | P-Channel 20V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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www.vishay.com
Si8481DB
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
MICRO FOOT® 1.6 x 1.6
D
D2
xxxxxxx
3
1
1 1.6 mm
4G
S
Backside View
Bump Side View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = -4.5 V
RDS(on) max. () at VGS = -2.5 V
RDS(on) max. () at VGS = -1.8 V
Qg typ. (nC)
ID (A)
Configuration
-20
0.021
0.025
0.039
31.2
-9.7 a
Single
FEATURES
• TrenchFET® Gen III p-channel power MOSFET
• Low 0.6 mm maximum height
• Low on-resistance
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load switch
- With low voltage drop
• Power management in battery-
operated, mobile, and wearable
devices
G
S
P-Channel MOSFET
D
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
MICRO FOOT
Si8481DB-T1-E1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
TA = 25 °C
Pulsed drain current (t = 100 μs)
TA = 70 °C
Continuous source-drain diode current
TA = 25 °C
TA = 70 °C
TA = 25 °C
Maximum power dissipation
TA = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Package reflow conditions c
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
VPR
IR / convection
LIMIT
-20
±8
-9.7 a
-7.8 a
-6.2 b
-5 b
-30
-2.3 a
-0.92 b
2.8 a
1.8 a
1.1 b
0.73 b
-55 to +150
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum junction-to-ambient a, f
Maximum junction-to-ambient b, g
t5s
RthJA
35
85
45
110
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on TA = 25 °C.
f. Maximum under steady state conditions is 85 °C/W.
g. Maximum under steady state conditions is 175 °C/W.
UNIT
V
A
W
°C
UNIT
°C/W
S16-2380-Rev. A, 21-Nov-16
1
Document Number: 75264
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
Si8481DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
12 10000
3
Axis Title
10000
10 2.5
8
1000
2
1000
6 1.5
4 100 1 100
2 0.5
0 10
0 25 50 75 100 125 150
TA - Case Temperature (°C)
2nd line
Current Derating a
0
25
50 75 100 125
TA - Ambient Temperature (°C)
2nd line
10
150
Power, Junction-to-Ambient a
Note
a. When surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 -1
1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with maximum copper)
S16-2380-Rev. A, 21-Nov-16
5
Document Number: 75264
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI8481DB.PDF ] | |
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