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PDF GBS6K Data sheet ( Hoja de datos )
| Número de pieza | GBS6K | |
| Descripción | Silicon Bridge Rectifiers | |
| Fabricantes | Galaxy Microelectronics | |
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Production specification
Silicon Bridge Rectifiers
GBS6A--GBS6M
FEATURES
z Rating to 1000V PRV
z Surge overload rating to 140 Amperes peak
Pb
Lead-free
z Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
z Lead solderable per MIL-STD-202 method 208
Maximum Ratings(@TA = 25°C unless otherwise specified)
Characteristic
GBS GBS
Symbol
6A 6B
Maximum recurrent peak reverse voltage
VRRM
50 100
GBS
6D
200
GBS
6G
400
GBS
6J
600
GBS
6K
800
GBS
6M
1000
Maximum RMS voltage
VRMS
35 70 140 280 420 560 700
Maximum DC blocking voltage
VDC 50 100 200 400 600 800 1000
UNITS
V
V
V
50Hz sine wave, R-load Without heat sink Ta=25℃
50Hz sine wave, R-load With heat sink Tc=50℃
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
IF(AV)
IFSM
2.3
6.0
140
A
A
Thermal Characteristics
Characteristic
Rating for fusing (t < 8.3 ms)
Typical junction capacitance per diode
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Symbol
I2t
CJ
RθJA
RθJC
TJ
TSTG
GBS
6A
GBS GBS GBS GBS
6B 6D 6G 6J
82
95
22
3.5
- 55 ---- + 150
- 55 ---- + 150
GBS
6K
40
GBS
6M
UNITS
A2s
pF
°C/W
℃
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
Maximum instantaneous forward voltage @3.0A
Maximum reverse current
at rated DC blocking voltage
@TA=25 ℃
@TA=100℃
VF
IR
Value
1.05
5.0
500
UNITS
V
μA
Document Number:GBS802AA
www.gmicroelec.com
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet GBS6K.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GBS6A | Silicon Bridge Rectifiers | Galaxy Microelectronics |
| GBS6B | Silicon Bridge Rectifiers | Galaxy Microelectronics |
| GBS6D | Silicon Bridge Rectifiers | Galaxy Microelectronics |
| GBS6G | Silicon Bridge Rectifiers | Galaxy Microelectronics |
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