|
|
VEMD1160X01のメーカーはVishayです、この部品の機能は「Silicon PIN Photodiode」です。 |
部品番号 | VEMD1160X01 |
| |
部品説明 | Silicon PIN Photodiode | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとVEMD1160X01ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
www.vishay.com
VEMD1160X01
Vishay Semiconductors
Silicon PIN Photodiode
DESCRIPTION
VEMD1160X01 is a high speed and high sensitive PIN
photodiode with a highly linear photoresponse. It is a low
profile surface mount device (SMD) including the chip with a
0.23 mm2 sensitive area and a daylight blocking filter.
FEATURES
• Package type: surface mount
• Package form: 0805 top view
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• Radiant sensitive area (in mm2): 0.23
• Daylight blocking filter
• AEC-Q101 qualified
• High photo sensitivity
• High radiant sensitivity
• Excellent Ira linearity
• Fast response times
• Angle of half sensitivity: ϕ = ± 70°
• Floor life: 72 h, MSL 4, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
• Small signal detection
• Proximity sensors
PRODUCT SUMMARY
COMPONENT
VEMD1160X01
Ira (μA)
1.8
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg)
± 70
λ0.1 (nm)
700 to 1070
ORDERING INFORMATION
ORDERING CODE
VEMD1160X01
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 3000 pcs, 3000 pcs/reel
PACKAGE FORM
0805 top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction / ambient
Tamb ≤ 25 °C
According to reflow solder profile Fig. 6
According to EIA / JESD 51
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
20
215
110
-40 to +110
-40 to +110
260
270
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 1.1, 30-Jun-16
1 Document Number: 84305
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page www.vishay.com
100
VR = 5 V, λ = 950 nm
10
1
0.1
0.01
0.01
0.1 1
Ee - Irradiance (mW/cm2)
10
Fig. 3 - Reverse Light Current vs. Irradiance
10
1
0.1
0.01
0.1
10 mW/cm2
5.0 mW/cm2
2.0 mW/cm2
1.0 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.02 mW/cm2
0.01 mW/cm2
λ = 950 nm
1 10 100
VR - Reverse Voltage (V)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.001
f = 1 MHz, E = 0
0.01 0.1 1 10
VR - Reverse Voltage (V)
100
Fig. 5 - Diode Capacitance vs. Reverse Voltage
VEMD1160X01
Vishay Semiconductors
1.0
0.8
0.6
0.4
0.2
0
400 500 600 700 800 900 1000 1100
λ - Wavelength (nm)
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
30°
1.0
0.9
0.8
0.7
0.6 0.4 0.2 0
40°
50°
60°
70°
80°
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
Rev. 1.1, 30-Jun-16
3 Document Number: 84305
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages www.vishay.com
REEL DIMENSIONS in millimeters
VEMD1160X01
Vishay Semiconductors
8.4 +2.5
8.4 +0.15
Form of the leave open
of the wheel is supplier specific.
Z
Z 2:1
14.4 max.
Drawing-No.: 9.800-5096.01-4
Issue: 2; 26.04.10
20875
technical drawings
according to DIN
specifications
Rev. 1.1, 30-Jun-16
6 Document Number: 84305
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ VEMD1160X01 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
VEMD1160X01 | Silicon PIN Photodiode | Vishay |