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S29WS512P の電気的特性と機能

S29WS512PのメーカーはCypress Semiconductorです、この部品の機能は「Simultaneous Read/Write Flash」です。


製品の詳細 ( Datasheet PDF )

部品番号 S29WS512P
部品説明 Simultaneous Read/Write Flash
メーカ Cypress Semiconductor
ロゴ Cypress Semiconductor ロゴ 




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S29WS512P Datasheet, S29WS512P PDF,ピン配置, 機能
S29WS512P
S29WS256P
S29WS128P
512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V,
Simultaneous Read/Write Flash
Features
Single 1.8 V read/program/erase (1.70–1.95 V)
90 nm MirrorBit™ Technology
Simultaneous Read/Write operation with zero latency
Random page read access mode of 8 words with 20 ns intra page
access time
32 Word / 64 Byte Write Buffer
Sixteen-bank architecture consisting of
32/16/8 Mwords for 512/256/128P, respectively
Four 16 Kword sectors at both top and bottom of memory array
510/254/126 64Kword sectors (WS512/256/128P)
Programmable linear (8/16/32) with or without wrap around and
continuous burst read modes
Secured Silicon Sector region consisting of 128 words each for
factory and 128 words for customer
20-year data retention (typical)
Cycling Endurance: 100,000 cycles per sector (typical)
Command set compatible with JEDEC (42.4) standard
Hardware (WP#) protection of top and bottom sectors
Dual boot sector configuration (top and bottom)
Handshaking by monitoring RDY
Offered Packages
– WS512P/WS256P/WS128P: 84-ball FBGA
(11.6 mm x 8 mm)
Low VCC write inhibit
Persistent and Password methods of Advanced Sector Protection
Write operation status bits indicate program and erase operation
completion
Suspend and Resume commands for Program and Erase
operations
Unlock Bypass program command to reduce programming time
Synchronous or Asynchronous program operation, independent of
burst control register settings
ACC input pin to reduce factory programming time
Support for Common Flash Interface (CFI)
General Description
The Spansion S29WS512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These burst mode
Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using
separate data and address pins. These products can operate up to 104 MHz and use a single VCC of 1.7 V to 1.95 V that makes
them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power
consumption.
Performance Characteristics
Read Access Times
Speed Option (MHz)
Max. Synch Access Time (tIACC)
Max. Synch. Burst Access, ns (tBACC)
Max OE# Access Time, ns (tOE)
Max. Asynch. Access Time, ns (tACC)
104
103.8
7.6
7.6
80
Current Consumption (typical values)
Continuous Burst Read @ 104 MHz
Simultaneous Operation 104 MHz
Program
Standby Mode
Typical Program & Erase Times
Single Word Programming
Effective Write Buffer Programming (VCC) Per Word
Effective Write Buffer Programming (VACC) Per Word
Sector Erase (16 Kword Sector)
Sector Erase (64 Kword Sector)
36 mA
40 mA
20 mA
20 µA
40 µs
9.4 µs
6 µs
350 ms
600 ms
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-01747 Rev. *A
• San Jose, CA 95134-1709 • 408-943-2600
Revised December 17, 2015

1 Page





S29WS512P pdf, ピン配列
S29WS512P
S29WS256P
S29WS128P
1. Ordering Information
The ordering part number is formed by a valid combination of the following:
S29WS 512 P xx BA W 00 0
Packing Type
0 = Tray (standard; see note 1)
2 = 7-inch Tape and Reel
3 = 13-inch Tape and Reel
Model Number
(Chip Enable Options)
00 = Default
Temperature Range
W = Wireless (–25C to +85C)
Package Type And Material
BA = Very Thin Fine-Pitch BGA, Lead (Pb)-free Compliant Package
BF = Very Thin Fine-Pitch BGA, Lead (Pb)-free Package
Speed Option (Burst Frequency)
0L = 54 MHz
0P = 66 MHz
0S = 80 MHz
AB = 104 MHz
Process Technology
P = 90 nm MirrorBit®Technology
Flash Density
512= 512 Mb
256= 256 Mb
128= 128 Mb
Device Family
S29WS =1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
1.1 Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
Base Ordering
Part Number
S29WS512P
S29WS256P
S29WS128P
S29WS512P Valid Combinations (Notes 1, 2)
Product
Status
Speed
Option
Package Type, Material, &
Temperature Range
Packing
Type
Model
Numbers
Advance
0L, 0P,
0S, AB
BAW (Lead (Pb)-free
Compliant),
BFW (Lead (Pb)-free)
0, 2, 3
(Note 1)
00
Notes:
1. Type 0 is standard. Specify other options as required.
2. BGA package marking omits leading S29 and packing type designator from ordering part number.
Package Type
(Note 2)
11.6 mm x 8 mm
84-ball
MCP-Compatible
11.6 mm x 8 mm
84-ball
MCP-Compatible
Document Number: 002-01747 Rev. *A
Page 3 of 86


3Pages


S29WS512P 電子部品, 半導体
S29WS512P
S29WS256P
S29WS128P
Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data
integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time.
Figure 4.1 84-Ball Fine-Pitch Ball Grid Array, 512, 256 & 128 Mb
(Top View, Balls Facing Down, MCP Compatible)
A1 A10
NC NC
B2
AVD#
B3
VSS
B4
CLK
B5
RFU
B6
VCC
B7
RFU
B8
RFU
B9
RFU
C2
WP#
C3
A7
C4
RFU
C5
ACC
C6
WE#
C7
A8
C8
A11
C9
RFU
D2 D3 D4 D5 D6 D7 D8 D9
A3
A6
RFU RESET# RFU
A19
A12
A15
E2 E3
A2 A5
E4 E5 E6 E7 E8 E9
A18 RDY
A20
A9
A13 A21
F2 F3 F4 F5 F6 F7 F8 F9
A1 A4 A17 RFU A23 A10 A14 A22
G2 G3 G4 G5 G6 G7 G8 G9
A0
VSS
DQ1
RFU
RFU
DQ6
A24
A16
H2
F-CE#
H3
OE#
H4
DQ9
H5
DQ3
H6
DQ4
H7
DQ13
H8
DQ15
H2
RFU
J2
RFU
J3
DQ0
J4
DQ10
J5
VCC
J6
RFU
J7
DQ12
J8
DQ7
J9
VSS
K2
RFU
K3
DQ8
K4
DQ2
K5
DQ11
K6
RFU
K7
DQ5
K8
DQ14
K9
RFU
L2
RFU
L3
RFU
L4
VSS
L5
VCC
L6
RFU
L7
RFU
L8
VCCQ
L9
RFU
M1 M10
NC NC
Notes:
1. Balls F6 and G8 are RFU on the WS128P.
2. Ball G8 is RFU on the WS256P.
3. VCC pins must ramp simultaneously.
Legend
Reserved for
Future Use
Do Not Use
Ground
Power
Document Number: 002-01747 Rev. *A
Page 6 of 86

6 Page



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共有リンク

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部品番号部品説明メーカ
S29WS512N

Migrating from the S71WS512N to the S71WS512P

SPANSION
SPANSION
S29WS512P

Simultaneous Read/Write Flash

Cypress Semiconductor
Cypress Semiconductor
S29WS512P

Burst Simultaneous Read/Write MirrorBit Flash Memory

SPANSION
SPANSION


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