DataSheet.jp

GW30NC120HD の電気的特性と機能

GW30NC120HDのメーカーはSTMicroelectronicsです、この部品の機能は「STGW30NC120HD」です。


製品の詳細 ( Datasheet PDF )

部品番号 GW30NC120HD
部品説明 STGW30NC120HD
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




このページの下部にプレビューとGW30NC120HDダウンロード(pdfファイル)リンクがあります。

Total 13 pages

No Preview Available !

GW30NC120HD Datasheet, GW30NC120HD PDF,ピン配置, 機能
STGW30NC120HD
N-channel 1200V - 30A - TO-247
very fast PowerMESH™ IGBT
Features
Type
VCES
STGW30NC120HD 1200V
VCE(sat)
@25°C
< 2.75V
IC
@100°C
30A
Low on-losses
Low on-voltage drop (Vcesat)
High current capability
High input impedance (voltage driven)
Low gate charge
Ideal for soft switching application
Application
Induction heating
Description
Using the latest high voltage technology based on
its patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, with
outstanding performances. The suffix “H”
identifies a family optimized for high frequency
application in order to achieve very high switching
performances (reduced tfall) maintaining a low
voltage drop.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STGW30NC120HD
GW30NC120HD
Package
TO-247
Packaging
Tube
October 2007
Rev 9
1/13
www.st.com
13

1 Page





GW30NC120HD pdf, ピン配列
STGW30NC120HD
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCES Collector-emitter voltage (VGS = 0)
IC (1) Collector current (continuous) at 25°C
IC (1) Collector current (continuous) at 100°C
ICL (2) Collector current (pulsed)
VGE Gate-emitter voltage
PTOT Total dissipation at TC = 25°C
If Diode RMS forward current at TC = 25°C
Tj Operating junction temperature
1. Calculated according to the iterative formula:
IC(TC)
=
----------------------------------T----J---M------A----X------–----T----C-------------------------------------
RTHJ C × VCESAT(MAX)(TC, IC)
2. Vclamp=80% of BVces, Tj=150°C, RG=10, VGE=15V
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-ambient (diode)
Rthj-amb Thermal resistance junction-ambient (IGBT)
Electrical ratings
Value
1200
60
30
135
±25
220
30
–55 to 150
Unit
V
A
A
A
V
W
A
°C
Value
0.57
1.6
30
Unit
°C/W
°C/W
°C/W
3/13


3Pages


GW30NC120HD 電子部品, 半導体
Electrical characteristics
STGW30NC120HD
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics
Figure 3. Transfer characteristics
Figure 4. Transconductance
Figure 5. Collector-emitter on voltage
vs. temperature
Figure 6. Gate charge vs. gate-source Figure 7. Capacitance variations
voltage
6/13

6 Page



ページ 合計 : 13 ページ
 
PDF
ダウンロード
[ GW30NC120HD データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
GW30NC120HD

STGW30NC120HD

STMicroelectronics
STMicroelectronics


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap