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Número de pieza | BUZ102S | |
Descripción | Power Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUZ102S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! BUZ 102S
SIPMOS Power Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
• 175 ˚C operating temperature
VDS
RDS(on)
ID
55
0.018
52
V
Ω
A
Type
BUZ102S
BUZ102S E3045A
BUZ102S E3045
Package Ordering Code
P-TO220-3-1 Q67040-S4011-A2
P-TO263-3-2 Q67040-S4011-A6
P-TO263-3-2 Q67040-S4011-A5
Packaging
Tube
Tape and Reel
Tube
Pin 1 Pin 2 Pin 3
GDS
Maximum Ratings, at Tj = 25 ˚C unless unless specified
Parameter
Symbol
Continuous drain current
TC = 25 ˚C
TC = 100 ˚C
ID
Pulsed drain current
TC = 25 ˚C
Avalanche energy, single pulse
ID = 52 A, VDD = 25 V, RGS = 25 Ω
IDpulse
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 52 A, VDS = 40 V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
52
37
208
245
12
6
Unit
A
mJ
kV/µs
±20
120
-55... +175
55/175/56
V
W
˚C
Data Book
1
05.99
1 page BUZ 102S
Power Dissipation
Ptot = f (TC)
BUZ102S
2.8
W
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160 ˚C 190
TC
Safe operating area
ID = f (VDS)
parameter : D = 0 , TC = 25 ˚C
10 3 BUZ102S
A
tp = 19.0µs
Drain current
ID = f (TC)
parameter: VGS ≥ 10 V
BUZ102S
60
A
50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160 ˚C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 BUZ102S
K/W
10 0
10 2
10 1
10
0
10
-1
10 0
100 µs
1 ms
10 ms
DC
10 1 V 10 2
VDS
10 -1
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-5
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Data Book
5
05.99
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BUZ102S.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUZ102 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) | Siemens Semiconductor Group |
BUZ102AL | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated) | Siemens Semiconductor Group |
BUZ102S | Power Transistor | Infineon |
BUZ102S | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) | Siemens Semiconductor Group |
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