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GFB60N03 の電気的特性と機能

GFB60N03のメーカーはGeneral Semiconductorです、この部品の機能は「N-Channel Enhancement-Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 GFB60N03
部品説明 N-Channel Enhancement-Mode MOSFET
メーカ General Semiconductor
ロゴ General Semiconductor ロゴ 




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GFB60N03 Datasheet, GFB60N03 PDF,ピン配置, 機能
GFB60N03
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
TO-263AB
VDS 30V RDS(ON) 11mID 60A
New Product
G
D
0.380 (9.65)
0.420 (10.67)
0.21 (5.33)
Min.
D
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
S
0.42
(10.66)
0.320 (8.13)
0.360 (9.14)
PIN
GDS
Seating Plate
-T-
0.096 (2.43)
0.102 (2.59)
0.027 (0.686)
0.037 (0.940)
0.575 (14.60)
0.625 (15.88)
0.120 (3.05)
0.155 (3.94)
0.055 (1.39)
0.066 (1.68)
Dimensions in inches
and (millimeters)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
0.63
(17.02)
0.33
(8.38)
Mounting Pad
Layout
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
Mechanical Data
Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 1.3g
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
VDS
30
VGS ±20
ID 60
Pulsed Drain Current
IDM 100
Maximum Power Dissipation
TC = 25°C
TC = 100°C
PD
62.5
25
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Lead Temperature (1/8” from case for 5 sec.)
TL 275
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
2.0
40
Notes: (1) Maximum DC current limited by the package
(2) 1-in2 2oz. Cu PCB mounted
Unit
V
A
W
°C
°C
°C/W
°C/W
5/1/01

1 Page





GFB60N03 pdf, ピン配列
GFB60N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
80
VGS=10V
5.0V
4.5V
6.0V
60 4.0V
Fig. 2 – Transfer Characteristics
60
VDS = 10V
50
40
40
3.5V
20
3.0V
2.5V
0
012345
VDS -- Drain-to-Source Voltage (V)
Fig. 3 – Threshold Voltage
vs. Temperature
1.4
ID = 250µA
1.2
1
0.8
0.6
0.4
--50 --25
0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 5 – On-Resistance
vs. Junction Temperature
1.6
VGS = 10V
ID = 30A
1.4
30
20
10
0
1
0.03
0.025
0.02
0.015
0.01
0.005
0
0
TJ = 125°C
25°C
--55°C
2 34
VGS -- Gate-to-Source Voltage (V)
Fig. 4 – On-Resistance
vs. Drain Current
5
VGS = 4.5V
5V
10V
20 40 60
ID -- Drain Current (A)
80
100
1.2
1
0.8
0.6
--50 --25 0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)


3Pages





ページ 合計 : 5 ページ
 
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[ GFB60N03 データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
GFB60N03

N-Channel Enhancement-Mode MOSFET

General Semiconductor
General Semiconductor


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