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FGA20S125P の電気的特性と機能

FGA20S125PのメーカーはFairchild Semiconductorです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGA20S125P
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGA20S125P Datasheet, FGA20S125P PDF,ピン配置, 機能
November 2014
FGA20S125P
1250 V, 20 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.0 V @ IC = 20 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave oven
General Description
Using advanced field stop trench and shorted anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
C
GCE
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM (1)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Limited by Tjmax
G
E
FGA20S125P_SN00336
1250
±25
40
20
60
40
20
250
125
-55 to +175
-55 to +175
300
Typ.
--
--
Max.
0.6
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
© 2014 Fairchild Semiconductor Corporation
FGA20S125P Rev. C1
1
www.fairchildsemi.com

1 Page





FGA20S125P pdf, ピン配列
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160
TC = 25oC
140
120
20V
VGE = 17V
15V
100
80 12V
60
40
20
0
0.0
10V
9V
8V
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-Emitter Voltage, VCE [V]
8.0
Figure 3. Typical Saturation Voltage
Characteritics
120
Common Emitter
100
VGE = 15V
TC = 25oC
80 TC = 175oC
60
40
20
0
0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
3.5
Common Emitter
VGE = 15V
3.0
40A
2.5
20A
2.0
IC = 10A
1.5
1.0
25
50 75 100 125 150
Case Temperature, TC [oC]
175
Figure 2. Typical Saturation Voltage
Characteristics
160
TC = 175oC
140
120
100
VGE = 20V
17V
15V
80
60 12V
40 10V
9V
20 8V
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
80
Common Emitter
VCE = 20V
TC = 25oC
60 TC = 175oC
40
20
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. Vge
20
Common Emitter
TC = 25oC
15
10
IC = 10A
5
20A 40A
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
© 2014 Fairchild Semiconductor Corporation
FGA20S125P Rev. C1
3
www.fairchildsemi.com


3Pages


FGA20S125P 電子部品, 半導体
Figure 19. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
single pulse
1E-3
1E-5
1E-4
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
1
10
© 2014 Fairchild Semiconductor Corporation
FGA20S125P Rev. C1
6
www.fairchildsemi.com

6 Page



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共有リンク

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部品番号部品説明メーカ
FGA20S125P

IGBT ( Insulated Gate Bipolar Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


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