FGA15N120ANTDTU Datasheet PDF - Fairchild Semiconductor
| Part Number | FGA15N120ANTDTU | |
| Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
| Manufacturers | Fairchild Semiconductor | |
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FGA15N120ANTDTU
1200 V, 15 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low Saturation Voltage: VCE(sat), typ = 1.9 V
@ IC = 15 A and TC = 25C
• Low Switching Loss: Eoff, typ = 0.6 mJ
@ IC = 15 A and TC = 25C
• Extremely Enhanced Avalanche Capability
November 2013
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven.
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current (Note 1)
@ TC = 25C
@ TC = 100C
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25C
@ TC = 100C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction-to-Case for IGBT
RJC
Thermal Resistance, Junction-to-Case for Diode
RJA
Thermal Resistance, Junction-to-Ambient
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
Ratings
1200
20
30
15
45
30
15
45
186
74
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
C
C
C
Typ.
--
--
--
Max.
0.67
2.88
40
Unit
C/W
C/W
C/W
©2006 Fairchild Semiconductor Corporation
FGA15N120ANTDTU Rev. C1
1
www.fairchildsemi.com
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Typical Performance Characteristics (Continued)
Figure 7. Turn-On Characteristics vs. Gate
Resistance
100
tr
Figure 8. Turn-Off Characteristics vs. Gate
Resistance
1000
Common Emitter
V = 600V, V = 15V
CC GE
I = 15A
C
T = 25oC
C
T = 125oC
C
td(off)
10 td(on)
Common Emitter
V = 600V, V = 15V
CC GE
I = 15A
C
T = 25oC
C
T = 125oC
C
1
0 10 20 30 40 50 60 70
Gate Resistance, R []
G
100
tf
10
0
10 20 30 40 50 60 70
Gate Resistance, R []
G
Figure 9. Switching Loss vs. Gate Resistance
Common Emitter
V = 600V, V = 15V
CC GE
I = 15A
C
10
T = 25oC
C
T = 125oC
C
Eon
Eoff
1
0 10 20 30 40 50 60 70
Gate Resistance, R []
G
Figure 10. Turn-On Characteristics vs.
Collector Current
Common Emitter
V = 15V, R = 10
GE G
100
T = 25oC
C
T = 125oC
C
tr
10
10
td(on)
15 20 25
Collector Current, I [A]
C
30
Figure 11. Turn-Off Characteristics vs.
Collector Current
Common Emitter
V = 15V, R = 10
GE G
T = 25oC
C
T = 125oC
C
100
td(off)
tf
10
10
15 20 25
Collector Current, I [A]
C
30
Figure 12. Switching Loss vs. Collector Current
Common Emitter
V = 15V, R = 10
GE G
10
T = 25oC
C
T = 125oC
C
Eon
Eoff
1
0.1
5
10 15 20 25
Collector Current, I [A]
C
30
©2006 Fairchild Semiconductor Corporation
FGA15N120ANTDTU Rev. C1
5
www.fairchildsemi.com
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| Part Number | Description | MFRS |
| FGA15N120ANTDTU | The function is IGBT ( Insulated Gate Bipolar Transistor ). Fairchild Semiconductor | |
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