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PDF FGA6065ADF Data sheet ( Hoja de datos )
| Número de pieza | FGA6065ADF | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGA6065ADF
650 V, 60 A Field Stop Trench IGBT
May 2015
Features
• Maximum Junction Temperature : TJ = 175 oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A
• 100% of the Parts Tested for ILM (1)
• High Input Impedance
• Fast Switching
• RoHS Compliant
General Description
This ADF IGBT series adopted Field Stop Trench 3rd genera-
tion IGBT which offer extreme low Rds(on) and much faster
switching characteristics for outstanding efficiency. And this kind
of technology is fully optimized to variety PFC (Power Factor
Correction) topology ; Single boost, Multi channel interleaved
etc with over 20KHz switching performance. TO3P package
provide Super Low thermal resistance for much wider SOA for
system stability.
Applications
• PFC topology for Home appliance : Single Boost , Multi chan-
nel Interleaved etc.
• PFC Topology for Welder
C
G
C
E
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM (2)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC =180 A, RG = 48.4 Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2015 Fairchild Semiconductor Corporation
FGA6065ADF Rev. 1.0
1
G
E
FGA6065ADF
650
20
30
120
60
180
180
60
30
120
306
153
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
10000
Cies
1000
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
Cres
TC = 25oC
10
1 10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
200
30
100
tr
10
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG []
50
Figure 11. Switching Loss vs.
Gate Resistance
10
Eon
1
0.1
0
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG []
50
Figure 8. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
9
VCC = 200V
300V
400V
6
3
0
0 15 30 45 60 75 90
Gate Charge, Qg [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
td(off)
100
10 0
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG []
50
Figure 12. Turn-on Characteristics vs.
Collector Current
400
tr
100
td(on)
10
420
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
40 60 80 100 120 140 160
Collector Current, IC [A]
©2015 Fairchild Semiconductor Corporation
FGA6065ADF Rev. 1.0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA6065ADF.PDF ] | |
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