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FQA8N80C_F109 の電気的特性と機能

FQA8N80C_F109のメーカーはFairchild Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQA8N80C_F109
部品説明 MOSFET ( Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQA8N80C_F109 Datasheet, FQA8N80C_F109 PDF,ピン配置, 機能
FQA8N80C_F109
800V N-Channel MOSFET
Features
• 8.4A, 800V, RDS(on) = 1.55@VGS = 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 13pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
November 2007
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G DS
TO-3PN
FQA Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA8N80C_F109
800
8.4
5.3
33.6
± 30
850
8.4
22
4.0
220
1.75
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.57
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQA8N80C_F109 Rev. A
1
www.fairchildsemi.com

1 Page





FQA8N80C_F109 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
101 7.0 V
6.5 V
6.0 V
Bottom: 5.5 V
100
Notes :
1. 250µs Pulse Test
10-1 2. TC = 25
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1.
2.
2V5DS0µ=s50PVulse
Test
468
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
3.0
2.5
VGS = 10V
2.0 VGS = 20V
1.5
Note : TJ = 25
1.0
0 4 8 12 16 20
ID, Drain Current [A]
101
100
10-1
0.2
150 25
Notes :
1.
2.
2V5G0Sµ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 5. Capacitance Characteristics
2500
2000
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
Ciss
1500
1000
500
Coss
Notes :
1.
2.
fV=GS1=M0HVz
Crss
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 160V
10 VDS = 400V
VDS = 640V
8
6
4
2
Note : ID = 8A
0
0 10 20 30 40
QG, Total Gate Charge [nC]
FQA8N80C_F109 Rev. A
3
www.fairchildsemi.com


3Pages


FQA8N80C_F109 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQA8N80C_F109 Rev. A
6
www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
FQA8N80C_F109

MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


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