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FQA13N80_F109 の電気的特性と機能

FQA13N80_F109のメーカーはFairchild Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQA13N80_F109
部品説明 MOSFET ( Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQA13N80_F109 Datasheet, FQA13N80_F109 PDF,ピン配置, 機能
FQA13N80_F109
N-Channel QFET® MOSFET
800 V, 12.6 A, 750 mΩ
April 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 12.6 A, 800 V, RDS(on) = 750 m(Max.) @ VGS = 10 V,
ID = 6.3 A
• Low Gate Charge (Typ. 68 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
D
G
DS
TO-3PN
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
FQA13N80_F109
800
12.6
8.0
50.4
± 30
1100
12.6
30
4.0
300
2.38
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQA13N80_F109
0.42
0.24
40
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQA13N80_F109 Rev. C2
1
www.fairchildsemi.com

1 Page





FQA13N80_F109 pdf, ピン配列
 !    
Figure 1. On-Region Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
7.0 V
101
6.5 V
6.0 V
Bottom: 5.5 V
100
10-1
10-1
Notes :
1. 250µs Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.8
1.5
VGS = 10V
1.2
VGS = 20V
0.9
0.6
Note : TJ = 25
0.3
0
5 10 15 20 25 30 35 40 45
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
Ciss
Coss
Crss
Notes :
1.
2.
Vf =GS1=M0HVz
100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
2
150oC
25oC
-55oC
Notes :
1.
2.
V25DS0µ=s50PVulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
10-1
0.2
150 25
Notes :
1.
2.
V25G0Sµ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 6. Gate Charge Characteristics
12
VDS = 160V
10 VDS = 400V
8 VDS = 640V
6
4
2
Note : ID = 12.6 A
0
0 10 20 30 40 50 60 70 80
QG, Total Gate Charge [nC]
©2007 Fairchild Semiconductor Corporation
FQA13N80_F109 Rev. C2
3
www.fairchildsemi.com


3Pages


FQA13N80_F109 電子部品, 半導体
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D
=
--G--a--t-e--P---u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2007 Fairchild Semiconductor Corporation
FQA13N80_F109 Rev. C2
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FQA13N80_F109

MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


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