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Datasheet MYXX28HC256 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MYXX28HC256 | 256Kb EEPROM 256Kb EEPROM MYXX28HC256
32K x 8 EEPROM - 5 Volt, Byte Alterable
Description
The MYXX28HC256 is a high performance CMOS 32K x 8 E2PROM. It is fabricated with a textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory.
The MYXX28HC256 supports a 128-byte p |  Micross | data |
MYX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MYXB21200-20GAB | SiC Power BJT Double SiC Power BJT Double 1200 Volt 20 Amp Hermetic
MYXB21200-20GAB
Features PBreondeufitcst Overview• Two devices in one hermetic package.
ar y• High voltage 1200V isolation in a small package outline • High current 20A • High temperature 210OC
Appliicnations• RoHS compliant
• HMP sol Micross data | | |
| 2 | MYXD30600-10CEN | SiC Schottky 3 Phase Diode Bridge SiC Schottky 3 Phase Diode Bridge 600 Volt 10 Amp Hermetic MYXD30600-10CEN
Product OverviewFeatures
ary• High voltage 600V isolation
• 6 off high current 10A diodes
• High temperature 210°C
in• BeO free and RoHS compliant
• HMP solder tinned leads available
• Electrically isolate Micross diode | | |
| 3 | MYXD30650-10CEN | SiC Schottky 3 Phase Diode Bridge SiC Schottky 3 Phase Diode Bridge 650 Volt 10 Amp Hermetic MYXD30650-10CEN
Product OverviewFeatures
ary• High voltage 650V isolation
• 6 off high current 10A diodes
• High temperature 210°C
in• BeO free and RoHS compliant
• HMP solder tinned leads available
• Electrically isolate Micross diode | | |
| 4 | MYXDB0600-10CEN | SiC Schottky Diode Rectifier Bridge SiC Schottky Diode Rectifier Bridge 600 Volt 10 Amp Hermetic MYXDB0600-10CEN
Product OaverrvyiewFeatures • High voltage 600V isolation
• High current 10A
in• High temperature 210°C
• BeO free and RoHS compliant
• HMP solder tinned leads available
relim• Electrically isolated flan Micross rectifier | | |
| 5 | MYXDB0650-10CEN | SiC Schottky Diode Rectifier Bridge SiC Schottky Diode Rectifier Bridge 650 Volt 10 Amp Hermetic MYXDB0650-10CEN
Product OaverrvyiewFeatures • High voltage 650V isolation
• High current 10A
in• High temperature 210°C
• BeO free and RoHS compliant
• HMP solder tinned leads available
relim• Electrically isolated flan Micross rectifier | | |
| 6 | MYXDS0600-03AAS | Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode 600 Volt 3 Amp Hermetic MYXDS0600-03AAS
Product OaverrvyiewFeatures • High voltage 600V isolation in a small package outline
• High current 3A
in• High temperature 210°C
• BeO free and RoHS compliant
• HMP solder tinned leads available
relim• Electr Micross diode | | |
| 7 | MYXDS0600-03DA0 | Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode 600 Volt 3 Amp Hermetic SMD
MYXDS0600-03DA0
Product OverviewFeatures
ar y• High voltage 600V isolation in a small package outline
• High current 3A
• High temperature 210°C
• BeO free and RoHS compliant
in• HMP solder tinned leads available
• Electr Micross diode | |
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