|
|
PDF FDC610PZ Data sheet ( Hoja de datos )
| Número de pieza | FDC610PZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDC610PZ (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
FDC610PZ
P-Channel PowerTrench® MOSFET
–30V, –4.9A, 42mΩ
Features
General Description
August 2007
tm
Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A
Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A
Low gate charge (17nC typical).
High performance trench technology for extremely low rDS(on).
SuperSOTTM –6 package: small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
RoHS Compliant
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications:
load switching and power management, battery charging
circuits, and DC/DC conversion.
Application
DC - DC Conversion
S
D
D
Pin 1
G
D
D
SuperSOTTM -6
D1
D2
G 33
6D
5D
4S
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–30
±25
–4.9
–20
1.6
0.8
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
78
156
°C/W
Device Marking
.610Z
Device
FDC610PZ
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
FDC610PZ Rev.B
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
1E-3
10-4
SINGLE PULSE
RθJA = 156oC/W
10-3
10-2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 100
t, RECTANGULAR PULSE DURATION (s)
101
102
Figure 12. Transient Thermal Response Curve
103
FDC610PZ Rev.B
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDC610PZ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDC610PZ | MOSFET ( Transistor ) | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |