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FGB3040CS の電気的特性と機能

FGB3040CSのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel Ignition IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGB3040CS
部品説明 N-Channel Ignition IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGB3040CS Datasheet, FGB3040CS PDF,ピン配置, 機能
FGB3040CS
2FWREHU 201
EcoSPARKŠ 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
General Description
The FGB3040CS is an lgnition IGBT that offers outstand-
ing SCIS capability along with a ratiometric emitter current
sensing capability. This sensing is based on a emitter
active area ratio of 200:1. The output is provided through a
fourth (sense) lead. This signal provides a current level
that is proportional to the main collector to emitter current.
The effective ratio as measured on the sense lead is a
function of the sense output, the collector current and the
gate to emitter drive voltage.
Applications
„ Smart Automotive lgnition Coil Driver Circuits
„ ECU Based Systems
„ Distributorless Based Systems
„ Coil on Plug Based Systems
Features
„ SCIS Energy = 300mJ at TJ = 25oC
„ Logic Level Gate Drive
„ Qualified to AEC Q101
„ RoHS Compliant
Package
Symbol
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 2mA)
BVECS Emitter to Collector Breakdown Voltage (IC = 1mA) (Reverse Battery Condition)
ESCIS25 Self Clamping Inductive Switching Energy (at starting TJ = 25°C)
ESCIS150 Self Clamping Inductive Switching Energy (at starting TJ = 150°C)
IC25 Continuous Collector Current, at VGE = 4.0V, TC = 25°C
IC110
Continuous Collector Current, at VGE = 4.0V, TC = 110°C
VGEM Maximum Continuous Gate to Emitter Voltage
PD
Power Dissipation, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
TPKG Max. Package Temp. for Soldering (Package Body for 10 sec)
ESD Electrostatic Discharge Voltage, HBM model (100pfd, 1500 ohms)
@2012 Fairchild Semiconductor Corporation
FGB3040CS Rev. C
1
Ratings
430
24
300
170
21
19
±10
150
1
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
www.fairchildsemi.com

1 Page





FGB3040CS pdf, ピン配列
Typical Performance Curves
0.6
0.5
0.4
0.3
ICE = 18A
ICE = 15A
ICE = 10A
ICE = 8A
ICE = 5A
ICE = 3A
ICE = 1A
ICE = 0.5A
VGE = 5V, TJ = 25oC
0.2
0.1
0.0
1
10 100 1000
RSENSE, Emitter Sense Resistance (ohms)
Figure 1. Emitter Sense Voltage vs. Emitter Sense
Resistance
400
VGE = 5V, RSENSE = 5 ohms, TJ = 25oC
300
200
100
0
0 2 4 6 8 10 12 14 16 18 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 2. Emitter Sense Voltage vs. Collector to
Emitter Current
35
RG = 1KΩ, VGE = 5V, VCE = 14V
30
25
20 TJ = 25oC
15
10 TJ = 150oC
5
SCIS Curves valid for Vclamp Voltages of <430V
0
0 25 50 75 100 125 150 175
tCLP, TIME IN CLAMP (μS)
200
Figure 3. Self Clamped Inductive Switching
Current vs. Time in Clamp
35
RG = 1KΩ, VGE = 5V, VCE = 14V
30
25
20 TJ = 25oC
15
10 TJ = 150oC
5
SCIS Curves valid for Vclamp Voltages of <430V
0
02468
L, INDUCTANCE (mHy)
10
Figure 4. Self Clamped Inductive Switching
Current vs. Inductance
1.36
1.32
1.28
VGE = 3.7V
VGE = 4.0V
ICE = 6A
1.24
1.20
1.16
VGE = 8V
VGE = 5V
VGE = 4.5V
1.12
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERTURE (oC)
Figure 5. Collector to Emitter On-State Voltage
vs. Junction Temperature
1.8
ICE = 10A
1.7 VGE = 3.7V
VGE = 4.0V
1.6
1.5
1.4
VGE = 4.5V
1.3 VGE = 5V
VGE = 8V
1.2
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERTURE (oC)
Figure 6. Collector to Emitter On-State Voltage
vs. Junction Temperature
FGB3040CS Rev. C
3 www.fairchildsemi.com


3Pages


FGB3040CS 電子部品, 半導体
Typical Performance Curves
2
1 DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
PDM
0.01
SINGLE PULSE
1E-3
10-5
10-4
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION(s)
100
101
Figure 18. IGBT Normalized Transient Thermal Impedance, Junction to Case
FGB3040CS Rev. C1
6 www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FGB3040CS

N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor
FGB3040CS

N-Channel Current Sensing Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor


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