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PDF FGD3325G2_F085 Data sheet ( Hoja de datos )
| Número de pieza | FGD3325G2_F085 | |
| Descripción | N-Channel Ignition IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGD3325G2_F085
EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT
April 2015
Features
SCIS Energy = 330mJ at TJ = 25oC
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive lgnition Coil Driver Circuits
Coil On Plug Applications
Package
GATE
EMITTER
COLLECTOR
JEDEC TO-252
D-Pak
@2015 Fairchild Semiconductor Corporation
FGD3325G2_F085 Rev. 1.0
1
www.fairchildsemi.com
1 page  
Typical Performance Curves (Continued)
30
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
20
VGE = 4.0V
VGE = 3.7V
10
TJ = 175oC
0
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
50
VGE = 5V
40
30
20
10
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 9. DC Collector Current vs. Case
Temperature
10000
1000
VECS = 24V
100
VCES = 225V
10
1 VCES = 175V
0.1
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Leakage Current vs. Junction
Temperature
50
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
40
VCE = 5V
30
20
TJ = 25oC
10
TJ = 175oC
TJ = -40oC
0
1234
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
5
1.8
VCE = VGE
ICE = 1mA
1.6
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Threshold Voltage vs. Junction
Temperature
12
ICE = 6.5A, VGE = 5V, RG = 1KΩ
10
8
Inductive tOFF
6 Resistive tOFF
4
Resistive tON
2
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Switching Time vs. Junction
Temperature
@2015 Fairchild Semiconductor Corporation
FGD3325G2_F085 Rev. 1.0
5
www.fairchildsemi.com
5 Page 
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