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FDT3N40 の電気的特性と機能

FDT3N40のメーカーはFairchild Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDT3N40
部品説明 MOSFET ( Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDT3N40 Datasheet, FDT3N40 PDF,ピン配置, 機能
FDT3N40
N-Channel UniFETTM MOSFET
400 V, 2.0 A, 3.4
Features
• RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.0 A
• Low Gate Charge (Typ. 4.5 nC)
Low Crss (Typ. 3.7 pF)
• 100% Avalanche Tested
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
April 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
S
G SOT-223
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25C)
- Derate above 25C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RJA *
Thermal Resistance, Case-to-Sink Typ.
* Surface Mounted on JESD51-3 Board, T<0.1sec.
FDT3N40
400
2.0 *
1.2 *
8.0 *
30
46
2
0.2
4.5
2
0.02
-55 to +150
300
FDT3N40
60
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/C
C
C
Unit
C/W
©2009 Fairchild Semiconductor Corporation
FDT3N40 Rev. C0
1
www.fairchildsemi.com

1 Page





FDT3N40 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
101
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100 6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
* Notes :
1. 250s Pulse Test
2. T = 25oC
C
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
15
14
13
12
11
10
9
8
7 VGS = 10V
6
5
4 VGS = 20V
3
2
1
* Note : TJ = 25oC
0123456
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
350
300
250
200
150
100
50
0
10-1
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
* Note :
1. V = 0 V
Crss
GS
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
101
150oC
25oC
-55oC
100
4
* Notes :
1. VDS = 40V
2. 250s Pulse Test
56789
VGS, Gate-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
10-1
0.2
150oC
25oC
* Notes :
1. VGS = 0V
2. 250s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
V = 80V
DS
V = 200V
DS
8
V = 320V
DS
6
4
2
* Note : I = 2A
D
0
012345
Q , Total Gate Charge [nC]
G
©2009 Fairchild Semiconductor Corporation
FDT3N40 Rev. C0
3
www.fairchildsemi.com


3Pages


FDT3N40 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDT3N40 Rev. C0
6
www.fairchildsemi.com

6 Page



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共有リンク

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部品番号部品説明メーカ
FDT3N40

MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


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