|
|
Datasheet D882M Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | D882M | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
D882M TRANSISTOR (NPN)
TO-252-2L
FEATURES Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Volt | JCET | transistor |
2 | D882M | NPN Transistor 深圳市鹏爱半导体有限公司
SHENZHENPENGAI SEMICONDUCTOR CO.LTD
D882M 主要用途:
高频放大电路、应急灯、电动玩具控制电路。
主要特点:
硅外延平面工艺、输出特性好、电流容量大。
封装形式:
TO-126
TEL:0755-27656829 FAX:0755-23443106
NPN
� | SHENZHENPENGAI | transistor |
3 | D882M-G | General Purpose Transistors General Purpose Transistors
D882M-G
RoHS Device
Features
- Power Dissipation - High collector current. - High current gain. - Low collector-emitter saturation voltage.
Diagram
- 1. BASE - 2. COLLECTOR - 3. EMITTER
2
C
1
B
E
3
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbo | Comchip | transistor |
D88 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | D880 | NPN EPITAXIAL TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SD880
NPN SILICON TRANSISTOR
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SD880 is designed for audio frequency power amplifier applications.
FEATURES
* High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC= Unisonic Technologies transistor | | |
2 | D880 | Silicon NPN Power Transistors SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD880
DESCRIPTION www.dat·aWshiethet4Tu.Oco-m220C package
·Complement to type 2SB834 ·Low collector saturation voltage
APPLICATIONS ·Designed for use in audio frequency
power amplifier applications
PINNING PIN 1 2 3
SavantIC transistor | | |
3 | D880 | NPN Transistor, 2SD880 A
A
A
Mospec Semiconductor data | | |
4 | D880 | NPN Epitaxial Silicon Transistor D880 NPN Epitaxial Silicon Transistor
TO-220
LOW FREQUENCY POWER AMPLIFIER
Complement to B834 Collector-Emitter Voltage: VCEO=150V Collector Dissipation: PC(max)=30W
Absolute Maximum Ratings (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu Elite transistor | | |
5 | D882 | NPN Transistor RoHS D882
D882 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: 3 Collector-base voltage
A
OV(BR)CBO:
40 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
ICELECT WEJ transistor | | |
6 | D882 | Plastic-Encapsulate Transistors WILLAS
SO1.0TA-S8U9RFPAlCaEsMtOicUN-ET SnCcHaOpTTsKuY BlaAtReRIETRrRaEnCsTIiFsIEtRoSr-s20V- 200V
SOD-123+ PACKAGE
FM120-M+ D882 THRU
FM1200-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile WILLAS transistor | | |
7 | D882 | NPN Transistor, 2SD882 SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD882
DESCRIPTION www.dat·aWshiethet4TuO.co-1m26 package
·Complement to type 2SB772
APPLICATIONS ·Audio amplifier ·Voltage regulator ·DC-DC converter ·Relay driver
PINNING PIN
DESCRIPTION
1 Emitter
2
Collector; SavantIC data | |
Esta página es del resultado de búsqueda del D882M. Si pulsa el resultado de búsqueda de D882M se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |