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PDF STD5N80K5 Data sheet ( Hoja de datos )
| Número de pieza | STD5N80K5 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD5N80K5
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
STD5N80K5
VDS
800 V
RDS(on) max.
1.75 Ω
ID
4A
Figure 1: Internal schematic diagram
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STD5N80K5
Table 1: Device summary
Marking
Package
5N80K5
DPAK
Packing
Tape and reel
May 2016
DocID028513 Rev 2
This is information on a product in full production.
1/16
www.st.com
1 page  
STD5N80K5
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf Fall time
Electrical characteristics
Table 7: Switching times
Test conditions
Min. Typ. Max. Unit
VDD= 400 V, ID = 2 A, RG = 4.7 Ω
VGS = 10 V
(see Figure 14: "Test circuit for
resistive load switching times" and
Figure 19: "Switching time
waveform")
- 12.7
- 11.7
- 23
- 14.8
-
-
-
-
ns
ns
ns
ns
Symbol Parameter
Table 8: Source-drain diode
Test conditions
ISD Source-drain current
ISDM(1)
Source-drain current
(pulsed)
VSD(2) Forward on voltage
ISD = 4 A, VGS = 0 V
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 4 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 4 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 4A
- 16 A
- 1.5 V
- 265
ns
- 1.59
µC
- 12
A
- 386
- 2.18
ns
µC
- 11.3
A
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS= ± 1mA, ID= 0 A
Min. Typ. Max. Unit
30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID028513 Rev 2
5/16
5 Page 
STD5N80K5
Dim.
A
A1
A2
b
b4
c
c2
D
D1
E
E1
e
e1
H
L
L1
L2
L4
R
V2
Package information
Table 10: DPAK (TO-252) type A2 mechanical data
mm
Min.
Typ.
Max.
2.20 2.40
0.90 1.10
0.03 0.23
0.64 0.90
5.20 5.40
0.45 0.60
0.48
6.00
4.95 5.10
0.60
6.20
5.25
6.40 6.60
5.10 5.20
2.16 2.28
4.40
5.30
2.40
4.60
9.35 10.10
1.00 1.50
2.60 2.80
0.65 0.80
3.00
0.95
0.60
0.20
0°
1.00
8°
DocID028513 Rev 2
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STD5N80K5.PDF ] | |
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