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STP12N120K5 の電気的特性と機能

STP12N120K5のメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL Power MOS MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP12N120K5
部品説明 N-CHANNEL Power MOS MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STP12N120K5 Datasheet, STP12N120K5 PDF,ピン配置, 機能
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs
in H²PAK-2, TO-220, TO-247 and TO-247 long leads
Datasheet - production data
H 2PAK-2
TO-220
Features
Order codes
VDS RDS(on) max. ID PTOT
STH12N120K5-2
STP12N120K5
1200 V
STW12N120K5
0.69 Ω
12 A 250 W
STWA12N120K5
TO-247
3
2
1
3
2
1
TO-247 long leads
Figure 1: Internal schematic diagram
D(TAB)
D(2, TAB)
G(1)
G(1)
S(2, 3)
(H 2PAK-2)
S(3)
( TO-220, TO-247 and
TO-247 long leads)
Worldwide best FOM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STH12N120K5-2
STP12N120K5
STW12N120K5
STWA12N120K5
Table 1: Device summary
Marking
Package
H2PAK-2
12N120K5
TO-220
TO-247
TO-247 long leads
Packing
Tape and reel
Tube
April 2015
DocID022133 Rev 4
This is information on a product in full production.
1/21
www.st.com

1 Page





STP12N120K5 pdf, ピン配列
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Electrical ratings
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
VGS
ID
ID
IDM (1)
PTOT
IAR (2)
EAS (3)
dv/dt (4)
dv/dt (5)
Tj
Tstg
Gate-source voltage
Drain current at TC = 25 °C
Drain current at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Max current during repetitive or single
pulse avalanche
Single pulse avalanche energy
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature
Storage temperature
± 30
12
7.6
48
250
4
215
4.5
50
- 55 to 150
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulse width limited by TJmax.
(3)Starting TJ = 25 °C, ID=IAS, VDD= 50 V
(4)ISD ≤ 12 A, di/dt ≤ 100 A/µs, VPeak V(BR)DSS
(5)VDS ≤ 960 V
Unit
V
A
A
A
W
A
mJ
V/ns
V/ns
°C
Table 3: Thermal data
Value
Symbol
Parameter
H2PAK-2 TO-220
TO-247
Unit
TO-247 long leads
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Rthj-pcb Thermal resistance junction-pcb max
30
0.5
62.5
50
°C/W
°C/W
°C/W
DocID022133 Rev 4
3/21


3Pages


STP12N120K5 電子部品, 半導体
Electrical characteristics
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for H2PAK-2 and
TO-220
ID GIPD300320150945MT
(A)
Figure 3: Thermal impedance for H2PAK-2 and
TO-220
K
δ=0.5
10
10µs
100µs
1ms
1 10ms
0.1
0.01
0.1
1
Tj=150°C
Tc=25°C
Single pulse
10 100 1000 VDS(V)
0.2
0.1
10 -1 0.05
0.02
0.01
Single pulse
10 -2
10 -5
10 -4
10 -3
Zthδ==Kt*pR/Ƭthj-c
10 -2
tp Ƭ
10 -1
tP(s)
Figure 4: Safe operating area for TO-247 and
TO-247 long leads
ID GIPD300320151033MT
(A)
10µs
10
100µs
1ms
1 10ms
0.1
0.01
0.1
1
Tj=150°C
Tc=25°C
Single pulse
10 100 1000 VDS(V)
Figure 5: Thermal impedance for TO-247 and
TO-247 long leads
K
δ=0.5
GC18460
0.2
0.1
10 -1
0.05
0.02
10 -2
0.01
Single pulse
Zth= K*R thj-c
δ= t p/Ƭ
10 -3
10 -5
10 -4
10 -3
10 -2
tp Ƭ
10 -1
tp (s)
Figure 6: Output characteristics
GIPD300320151056MT
ID(A)
VGS=9, 10V
8V
20
Figure 7: Transfer characteristics
GIPD300320151057MT
ID
(A)
VDS=20V
20
15 15
10 7V 10
5
0
05
6V
10 15 VDS(V)
5
0
5 6 7 8 9 VGS(V)
6/21 DocID022133 Rev 4

6 Page



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部品番号部品説明メーカ
STP12N120K5

N-CHANNEL Power MOS MOSFET

STMicroelectronics
STMicroelectronics


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