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BUZ31H の電気的特性と機能

BUZ31HのメーカーはInfineonです、この部品の機能は「Power-Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ31H
部品説明 Power-Transistor
メーカ Infineon
ロゴ Infineon ロゴ 




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BUZ31H Datasheet, BUZ31H PDF,ピン配置, 機能
SIPMOS ® Power Transistor
BUZ 31 H
• N channel
• Enhancement mode
• Avalanche-rated
Normal Level
. Pb-free lead plating; RoHs compliant
. Halogen-free according to IEC61249-2-21
Type
BUZ 31 H
VDS
200 V
ID
14.5 A
RDS(on)
0.2
Maximum Ratings
Parameter
Continuous drain current
TC = 30 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 14.5 A, VDD = 50 V, RGS = 25
L = 1.42 mH, Tj = 25 ˚C
Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
Power dissipation
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Package
PG-TO-220-3
Pb-free
Yes
Pin 3
S
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
14.5
58
13.5
9
Unit
A
mJ
200
± 20
Class 1
95
-55 ... + 150
-55 ... + 150
1.32
75
E
55 / 150 / 56
V
W
˚C
K/W
Rev. 2.5
Page 1
2009-11-09

1 Page





BUZ31H pdf, ピン配列
BUZ 31 H
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 7 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
Rise time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
Fall time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
5
-
-
-
-
-
-
-
Values
typ.
max.
12 -
840 1120
180 270
95 150
12 20
50 75
150 200
60 80
Unit
S
pF
ns
Rev. 2.5
Page 3
2009-11-09


3Pages


BUZ31H 電子部品, 半導体
BUZ 31 H
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
32 Ptot = 95W
A
l
kj i h
g
ID
24
20
16
12
8
VGS [V]
f a 4.0
b 4.5
c 5.0
e d 5.5
e 6.0
f 6.5
g 7.0
d
h 7.5
i 8.0
j 9.0
c k 10.0
l 20.0
b
4
a
0
0 2 4 6 8 10 V 13
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.65
0.55
RDS (on)0.50
a
bc d e
0.45
0.40
0.35
0.30
0.25
0.20
0.15
f
g
h
ji
k
0.10 VGS [V] =
0.05
abcdef
4.05 5.0 5.5 6.0 6.5 7.0
ghi j k
7.5 8.0 9.0 10.0 20.0
0.00
0 4 8 12 16 20 A 28
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
16
A
ID
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
13
S
11
gfs 10
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 A 16
ID
Rev. 2.5
Page 6
2009-11-09

6 Page



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共有リンク

Link :


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