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PDF PZTA64 Data sheet ( Hoja de datos )
| Número de pieza | PZTA64 | |
| Descripción | PNP Transistor | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PZTA64 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA64 TRANSISTOR (PNP)
FEATURES
Low Voltage and High Current
High Current Gain Applications
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-30
VCEO
Collector-Emitter Voltage
-30
VEBO
Emitter-Base Voltage
-10
IC Collector Current
-500
PC Collector Power Dissipation
1
RθJA
Thermal Resistance From Junction To Ambient
125
Tj Junction Temperature
150
Tstg Storage Temperature
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-emitter breakdown voltage V(BR)CES IC=-0.1mA,IB=0
Collector cut-off current
ICBO VCB=-30V,IE=0
Emitter cut-off current
IEBO VEB=-10V, IC=0
DC current gain
hFE(1)*
hFE(2)*
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
Collector-emitter saturation voltage VCE(sat)* IC=-100mA,IB=-0.1mA
Base-emitter voltage
VBE* VCE=-5V, IC=-100mA
Transition frequency
fT VCE=-5V,IC=-10mA, f=100MHz
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
Min
-30
10000
20000
125
Typ
Max
-100
-100
-1.5
-2
Unit
V
nA
nA
V
V
MHz
A,Nov,2010
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet PZTA64.PDF ] | |
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