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PDF VLA500-01 Data sheet ( Hoja de datos )

Número de pieza VLA500-01
Descripción Hybrid IC IGBT Gate Driver + DC/DC Converter
Fabricantes POWEREX 
Logotipo POWEREX Logotipo



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No Preview Available ! VLA500-01 Hoja de datos, Descripción, Manual

VLA500-01
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Hybrid IC
IGBT Gate Driver +
DC/DC Converter
AC
B
E
D
1
D
30
F
G
1
+
2
VD
15V
3
4
DC-DC
CONVERTER
Viso =
2500VRMS
REGULATOR
16.4 VDC
FAULT
LATCH
AND TIMER
+6
CONTROL
INPUT
5V
7
180
OPTO COUPLER
INTERFACE
BUFFER
19 VCC
VGE
DETECTOR
20 GND
27 SHUTDOWN
SPEED ADJUST
28 FAULT
29 ttrip ADJUST
30 VCE DETECT
25
26
23
24 VO
21
22 VEE
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
Inches
3.27
1.3
0.61
0.2
0.1
0.45
0.18
Millimeters
83.0
33.0
15.5
5.0
2.54
11.5
4.5
Note: All dimensions listed are maximums except E.
Description:
VLA500-01 is a hybrid integrated
circuit designed for driving IGBT
modules. This device is a fully
isolated gate drive circuit consist-
ing of an optimally isolated gate
drive amplifier and an isolated
DC-to-DC converter. The gate
driver provides an over-current
protection function based on
desaturation detection.
Features:
£ Built-in Isolated DC-to-DC
Converter for Gate Drive
£ SIP Outline Allows More Space
on Mounting Area
£ Built-in Short-Circuit Protection
(With Fault Output)
£ Variable Fall Time on Short-
Circuit Protection
£ Electrical Isolation Voltage
Between Input and Output
(2500 Vrms for 1 Minute)
£ TTL Compatible Input
Application:
To drive IGBT modules for inverter
or AC servo systems applications
Recommended IGBT Modules:
600V module up to 600A
1200V module up to 1400A
Rev. 2/08
1

1 page




VLA500-01 pdf
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
VLA500-01
Hybrid IC IGBT Gate Driver +
DC/DC Converter
Application Circuit
+15V
Common
+5V
Control
Fault
VLA500-01
12345 67
+
C1
B1
R4
C4
OP1
R3
17 18 19 20 21 22 23 24 25 26 27 28 29 30
D1
R2
DZ1
CS Ctrip
R1
++
RG
G
C2 C3
DZ2
DZ3 E
IGBT MODULE
Component Selection:
Design
Typical Value
D1 0.5A
DZ1 30V, 0.5W
DZ2, DZ3
18V, 1.0W
C1 150µF, 35V
C2, C3
100-1000µF, 35V
C4 0.01µF
CS 0-1000pF
Ctrip
R1
0-200pF
4.7k, 0.25W
R2 3.3k, 0.25W
R3 1k, 0.25W
R4 4.7k, 0.25W
OP1
NEC PS2501
B1 CMOS Buffer
Description
VCE detection diode – fast recovery, Vrrm > VCES of IGBT being used (Note 1)
Detect input pin surge voltage protection (Note 2)
Gate surge voltage protection
VD supply decoupling – Electrolytic, long life, low Impedance, 105°C (Note 3)
DC/DC output filter – Electrolytic, long life, low Impedance, 105°C (Note 3,4)
Fault feedback signal noise filter
Adjust soft shutdown – Multilayer ceramic or film (see application note)
Adjust trip time – Multilayer ceramic or film (see application note)
Fault sink current limiting resistor
Fault signal noise suppression resistor
Fault feedback signal noise filter
Fault feedback signal pull-up
Opto-coupler for fault feedback signal isolation
74HC04 or similar – Must actively pull high to maintain noise immunity
Notes:
(1) The VCE detection diode should have a blocking voltage rating equal to or greater than the VCES of the IGBT
being driven. Recovery time should be less than 200ns to prevent application of high voltage to Pin 30.
(2) DZ1 is necessary to protect Pin 30 of the driver from voltage surges during the recovery of D1.
(3) Power supply input and output decoupling capacitors should be connected as close as possible to the pins of the gate driver.
(4) DC-to-DC converter output decoupling capacitors must be sized to have appropriate ESR and ripple current
capability for the IGBT being driven.
Rev. 2/08
5

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