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PDF SPD08P06PG Data sheet ( Hoja de datos )
| Número de pieza | SPD08P06PG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPD08P06PG (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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SIPMOS® Power-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant
° Qualified according to AEC Q101
SPD08P06P G
Product Summary
V DS
R DS(on),max
ID
-60 V
0.3 Ω
-8.8 A
PG-TO252-3
Type
Package
SPD08P06PG PG-TO252-3
Tape and reel information
1000 pcs / reel
Marking Lead free
08P06P Yes
Packing
Non dry
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=100 °C
T A=25 °C
Avalanche energy, single pulse
E AS I D=8.83 A, R GS=25 Ω
Avalanche energy, periodic limited by
Tjmax
E AR
Reverse diode dv /dt
dv /dt
I D=8.83 A, V DS=48 V,
di /dt =-200 A/µs,
T j,max=175 °C
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
V GS
P tot T A=25 °C
T j, T stg
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
steady state
-8.83
-6.25
-35.32
70
4.2
-6
±20
42
"-55 ... +175"
260 °C
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 1.92
page 1
2012-09-10
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
-20 V
18
SPD08P06P G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
1000
900
-10 V
15
-7 V
12
9 -6 V
6 -5.5 V
-5V
3
-4.5 V
-4 V
0
012345678
-V DS [V]
800
700
-4 V
600
-4.5 V
500 -5 V
400
300
200
100
-5.5 V
-6 V
-7 V
-10 V
-20V
0
0 2 4 6 8 10 12 14
-I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
6
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
6
55
44
33
22
1 125 °C
25 °C
0
012345678
-V GS [V]
1
0
0 2 4 6 8 10
-I D [A]
Rev 1.92
page 5
2012-09-10
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SPD08P06PG.PDF ] | |
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