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S20T100FのメーカーはMospec Semiconductorです、この部品の機能は「Dual Schottky Barrier Power Rectifiers」です。 |
部品番号 | S20T100F |
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部品説明 | Dual Schottky Barrier Power Rectifiers | ||
メーカ | Mospec Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとS20T100Fダウンロード(pdfファイル)リンクがあります。 Total 2 pages
MOSPEC
S20T100F
Switchmode
Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal. The proprietary barrier technology allows for
reliable operation up to 150℃ junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters, free-
wheeling and polarity protection diodes.
Features
*Low Forward Voltage.
*Low Switching noise.
*High Current Capacity
*Guarantee Reverse Avalanche.
*Guard-Ring for Stress Protection.
*Low Power Loss & High efficiency.
*175℃ Operating Junction Temperature
*Low Stored Charge Majority Carrier Conduction.
*Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
*In compliance with EU RoHs 2002/95/EC directives
*Mounting Torqure: 5 in-lbs.Max.
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
100 VOLTS
ITO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( per diode )
Total Device (Rated VR),
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
Operating and Storage Junction Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IF(AV)
IFSM
TJ , Tstg
S20T100F
100
70
10
20
235
-65 to +150
Unit
V
V
A
A
℃
THERMAL RESISTANCES
Typical Thermal Resistance junction to case ( per device )
Rθj-c
3.4 ℃/w
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( IF =0.1 Amp TC = 25℃)
( IF =5.0 Amp TC = 25℃)
( IF =10 Amp TC = 25℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
( per diode )
Symbol Min Typ. Max. Unit
VF
--- 0.32 0.33
--- 0.53 0.55
V
--- 0.66 0.68
IR -- 0.03 0.05 mA
-- 7 10
DIM
MILLIMETERS
MIN MAX
A 15.05 15.15
B 13.35 13.45
C 10.00 10.10
D 6.55 6.65
E 2.65 2.75
F 1.55 1.65
G 1.15 1.25
H 0.55 0.65
I 2.50 2.60
J 3.00 3.20
K 1.10 1.20
L 0.55 0.65
M 4.40 4.60
N 1.15 1.25
O 3.35 3.45
P 2.65 2.75
Q 3.15 3.25
R 3.60 3.80
1 Page | |||
ページ | 合計 : 2 ページ | ||
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PDF ダウンロード | [ S20T100F データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
S20T100C | Dual Schottky Barrier Power Rectifiers | Mospec Semiconductor |
S20T100CB | Dual Schottky Barrier Power Rectifiers | Mospec Semiconductor |
S20T100F | Dual Schottky Barrier Power Rectifiers | Mospec Semiconductor |
S20T100FB | Dual Schottky Barrier Power Rectifiers | Mospec Semiconductor |