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S25FL216K の電気的特性と機能

S25FL216KのメーカーはCypressです、この部品の機能は「16-Mbit 3.0 V Serial Flash Memory」です。


製品の詳細 ( Datasheet PDF )

部品番号 S25FL216K
部品説明 16-Mbit 3.0 V Serial Flash Memory
メーカ Cypress
ロゴ Cypress ロゴ 




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S25FL216K Datasheet, S25FL216K PDF,ピン配置, 機能
Distinctive Features
Single power supply operation
– Full voltage range: 2.7 to 3.6V
16-Mbit Serial Flash
– 16-Mbit/2048 kbyte/9192 pages
– 256 bytes per programmable page
– Uniform 4-kbyte Sectors/64-kbyte Blocks
Standard and Dual
– Standard SPI: SCK, CS#, SI, SO, WP#, HOLD#
– Dual SPI: SCK, CS#, SI/IO0, SO, WP#, HOLD#
– Fast Read Dual Output instruction
– Auto-increment Read capability
High Performance
– FAST READ (Serial): 65 MHz clock rate
– DUAL OUTPUT READ: 65 MHz clock rate
Low Power Consumption
– 12 mA typical active current
– 15 µA typical standby current
S25FL216K
16-Mbit 3.0 V Serial Flash Memory
with Uniform 4 kB Sectors
Flexible Architecture with 4 kB Sectors
– Sector Erase (4 kB)
– Block Erase (64 kB)
– Page Program up to 256 bytes
– 100k erase/program cycles typical
– 20-year data retention typical
Software and Hardware Write Protection
– Write Protect all or portion of memory via software
– Enable/Disable protection with WP# pin
High Performance Program/Erase Speed
– Page program time: 1.6 ms typical
– Sector erase time (4 kB): 45 ms typical
– Block erase time (64 kB): 450 ms typical
– Chip erase time: 12 seconds typical
Package Options
– 8-pin SOIC 150/208-mil
– All Pb-free packages are RoHS compliant
General Description
The S25FL216K device is a 16-Mbit, 2048-kbyte Serial Flash memory, with advanced write protection mechanisms. The
S25FL216K supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output using SPI pins: Serial
Clock, Chip Select, Serial SI/IO0, SO, WP#, and HOLD#. SPI clock frequencies of up to 65 MHz are supported.
The S25FL216K array is organized into 8,192 programmable pages of 256 bytes each. Up to 256 bytes can be programmed at a
time. Pages can be erased in groups of 16 (4-kB Sector Erase), groups of 256 (64-kB Block Erase) or the entire chip (Chip Erase).
The S25FL216K has 512 erasable sectors and 32 erasable blocks. The small 4 kB sectors allow for greater flexibility in applications
that require data and parameter storage.
A Hold pin, Write Protect Pin and programmable write protection provide further control flexibility. Additionally, the S25FL216K
device supports JEDEC standard manufacturer and device identification.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-00719 Rev. *J
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 24, 2015

1 Page





S25FL216K pdf, ピン配列
1. Block Diagram
Address
Buffers
and
Latches
X -Decoder
Control Logic
Flash
M em ory
Y-Decoder
I/O Buffers
and Data
Latches
Serial Interface
CS#
SC K
SI/IO0 SO W P# HO LD #
2. Connection Diagrams
Figure 2.1 8-pin SOIC (150/208 mil)
CS# 1
SO 2
WP#
GND
3
4
8 VCC
7 HOLD#
6 SCK
5 SI/IO0
S25FL216K
Document Number: 002-00719 Rev. *J
Page 4 of 35


3Pages


S25FL216K 電子部品, 半導体
S25FL216K
5. Memory Organizations
The memory is organized as:
2,097,152 bytes
Uniform Sector Architecture
– 32 blocks of 64 kB
– 512 sectors of 4 kB
8,192 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector, Block or Chip Erasable but not
Page Erasable.
Figure 5.1 Memory Organization
xxFF00h
xxFFFFh
. .Sector 15 (4 kB)
xxF000h
xxEF00h
xxF0FFh
xxEFFFh
. .Sector 14 (4 kB)
xxE000h
xxE0FFh
xx1F00h
.
xx1000h
xx0F00h
.
xx0000h
xx1FFFh
Sector 1 (4 kB)
.
xx10FFh
xx0FFFh
Sector 0 (4 kB)
.
xx00FFh
1FFF00h
1FFFFFh
. .Block 31 (64 kB)
1F0000h
1F0FFFh
08FF00h
.
080000h
07FF00h
.
070000h
08FFFFh
Block 8 (64 kB)
.
0800FFh
07FFFFh
Block 7 (64 kB)
.
0700FFh
00FF00h
.
000000h
00FFFFh
Block 0 (64 kB)
.
0000FFh
Document Number: 002-00719 Rev. *J
Page 7 of 35

6 Page



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部品番号部品説明メーカ
S25FL216K

16-Mbit 3.0 V Serial Flash Memory

Cypress
Cypress
S25FL216K

16-Mbit 3.0V Serial Flash Memory

SPANSION
SPANSION


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