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PDF BDX33C Data sheet ( Hoja de datos )
| Número de pieza | BDX33C | |
| Descripción | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |
| Fabricantes | ARK | |
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Product specification
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX33C / BDX34C
DESCRIPTION
The BDX34C are silicon Epitaxial-Base PNP
power transistors in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package. They are intented for use in power
linear and switching applications.The
complementary NPN types are BDX33C
respectively.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
100 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
100 V
5V
10.0 A
0.25 A
70 W
150 oC
-65~150 oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
Collector Cut-off Current
ICEO
ICBO
VCE=100V, IB=0
VCB=100V, IE=0
Emitter Cut-off Current
DC Current Gain
IEBO
hFE(1)
hFE(2)
VEB=5V, IC=0
VCE=3V, IC=4.0A
VCE=3V, IC=3.0A
Collector-Emitter Saturation Voltage
VCE(sat) IC=4.0A,IB=8mA
IC=3.0A,IB=6mA
Base-Emitter Voltage
VBE(on) VCE=3V,IC=3.0A
Min.
—
—
—
750
750
—
—
—
Typ.
—
—
—
—
—
—
—
—
Max.
0.5
0.2
Unit
mA
mA
10 mA
—
—
2.5
V
2.5
2.5 V
1 page | ||
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| PDF Descargar | [ Datasheet BDX33C.PDF ] | |
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