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Datasheet GS4288C09GL Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GS4288C09GL | 288Mb CIO Low Latency DRAM GS4288C09/18/36L
144-Ball BGA Commercial Temp Industrial Temp
32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II
533 MHz–300 MHz
2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ
Features
• Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.067Gb/s/pin |  GSI Technology | data |
GS4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GS400SD | Schottky Barrier Diode ( SMD )
CORPORATION
GS400SD
Description Package Dimensions
ISSUED DATE :2005/12/20 REVISED DATE :
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 5 A
The GS400SD is high frequency rectification for switching power supply.
REF. A  GTM diode | | |
| 2 | GS401SD | Schottky Barrier Diode ( SMD )
CORPORATION
GS401SD
Description Package Dimensions
ISSUED DATE :2005/12/20 REVISED DATE :2006/05/24B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 3 0 V, C U R R E N T 0 . 2 A
The GS401SD is high frequency rectification for switching power supp GTM diode | | |
| 3 | GS402SD | Schottky Barrier Diode ( SMD )
CORPORATION
GS402SD
Description Package Dimensions
ISSUED DATE :2005/12/20 REVISED DATE :2006/05/24B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 3 0 V, C U R R E N T 0 . 3 A
The GS402SD is high frequency rectification for switching power supp GTM diode | | |
| 4 | GS411SD | Schottky Barrier Diode ( SMD )
CORPORATION
G S 4 11 S D
Description Package Dimensions
ISSUED DATE :2005/12/20 REVISED DATE :
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 5 A
The GS411SD is designed for low power rectification.
REF. A A1 A2 D E HE
GTM diode | | |
| 5 | GS420SD | Schottky Barrier Diode ( SMD )
CORPORATION
GS420SD
Description Package Dimensions
ISSUED DATE :2005/12/20 REVISED DATE :
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A
The GS420SD is designed for low power rectification.
REF. A A1 A2 D E HE
Mill GTM diode | | |
| 6 | GS421SD | Schottky Barrier Diode ( SMD )
CORPORATION
GS421SD
Description Package Dimensions
ISSUED DATE :2005/12/20 REVISED DATE :
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A
The GS421SD is designed for low power rectification.
REF. A A1 A2 D E HE
Mill GTM diode | | |
| 7 | GS4288C09GL | 288Mb CIO Low Latency DRAM GS4288C09/18/36L
144-Ball BGA Commercial Temp Industrial Temp
32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II
533 MHz–300 MHz
2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ
Features
• Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.067Gb/s/pin GSI Technology data | |
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