|
|
Datasheet D1047 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | D1047 | High power NPN epitaxial planar bipolar transistor 2SD1047
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC
Application
■ Power supply
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear | STMicroelectronics | transistor |
2 | D1047 | NPN Transistor, 2SD1047 www.DataSheet.co.kr
Ordering number:ENN680F
PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features
· Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeabl | Sanyo Semicon Device | data |
D10 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | D10 | Memory Micromodules General Information for D1/ D2 and C Packaging D10, D15, D20, D22, C20, C30 MICROMODULES
Memory Micromodules General Information for D1, D2 and C Packaging
s
Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding inte STMicroelectronics data | | |
2 | D1000 | NPN Transistor, 2SD1000 Renesas data | | |
3 | D1001 | NPN Transistor, 2SD1001 Renesas data | | |
4 | D1001UK | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED TetraFET
D1001UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2 D
4 M
3
E F
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIA Seme LAB data | | |
5 | D1002UK | METAL GATE RF SILICON FET MECHANICAL DATA
A
B C
1
4 M
2 3
F
D E
G
HK
PIN 1 PIN 3
SOURCE SOURCE
DA
PIN 2 PIN 4
IJ
DRAIN GATE
DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32
Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25
Inches 0.975 0.725 45° 0.25 0.1 Seme LAB gate | | |
6 | D1003UK | METAL GATE RF SILICON FET TetraFET
D1003UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIA Seme LAB gate | | |
7 | D1004 | METAL GATE RF SILICON FET TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D (2 pls) E
B
1
2
3
A
G
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
H I
F
M
K
J
N
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss Seme LAB gate | |
Esta página es del resultado de búsqueda del D1047. Si pulsa el resultado de búsqueda de D1047 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |