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PDF 2SD1047 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1047 | |
| Descripción | High power NPN epitaxial planar bipolar transistor | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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2SD1047
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 140 V
■ Typical ft = 20 MHz
■ Fully characterized at 125 oC
Application
■ Power supply
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2SD1047
April 2011
Marking
2SD1047
Package
TO-3P
Doc ID 018729 Rev 1
Packaging
Tube
1/10
www.st.com
10
1 page  
2SD1047
2.2 Test circuit
Figure 8. Resistive load switching test circuit
Electrical characteristics
1) Fast electronic switch
2) Non-inductive resistor
Doc ID 018729 Rev 1
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2SD1047.PDF ] | |
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