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GDSSF2300のメーカーはGOOD-ARKです、この部品の機能は「MOSFET ( Transistor )」です。 |
部品番号 | GDSSF2300 |
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部品説明 | MOSFET ( Transistor ) | ||
メーカ | GOOD-ARK | ||
ロゴ | |||
このページの下部にプレビューとGDSSF2300ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
GDSSF2300
DESCRIPTION
The SSF2300 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
GENERAL FEATURES
● VDS = 20V,ID = 2.4A
RDS(ON) < 110mΩ @ VGS=2.5V
RDS(ON) < 55mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D
G
S
Schematic diagram
Application
●Battery protection
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2300
SSF2300
SOT-23
Ø180mm
SOT-23 top view
Marking and pin Assignment
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID (25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID (70℃)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±8
2.4
1.
7
10
0.9
-55 To 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
IGSS VGS=±8V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
140 ℃/W
Min Typ Max
20
1
±100
0.65 0.95 1.2
Unit
V
μA
nA
V
Suzhou Goodark Electronics Co., Ltd
Version 1.0
1 Page GDSSF2300
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
Vin
D Vout
Vgs Rgen
G
S
td(on)
VOUT
VIN
10%
ton
tr
td(off)
toff
tf
90%
INVERTED
10%
90%
10%
50%
90%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
TJ-Junction Temperature(℃)
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Suzhou Goodark Electronics Co., Ltd
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
Version 1.0
3Pages GDSSF2300
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
Dimensions in Millimeters
MIN.
MAX.
A 0.900
1.150
A1 0.000
0.100
A2 0.900
1.050
b 0.300
0.500
c 0.080
0.150
D 2.800
3.000
E 1.200
1.400
E1 2.250
2.550
e 0.950TYP
e1 1.800
2.000
L 0.550REF
L1 0.300
0.500
θ 0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact。
Suzhou Goodark Electronics Co., Ltd
Version 1.0
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ GDSSF2300 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
GDSSF230 | MOSFET ( Transistor ) | GOOD-ARK |
GDSSF2300 | MOSFET ( Transistor ) | GOOD-ARK |
GDSSF2300A | MOSFET ( Transistor ) | GOOD-ARK |
GDSSF2300B | MOSFET ( Transistor ) | GOOD-ARK |