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Datasheet K2765-01 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K2765-01 | N-Channel MOSFET, 2SK2765-01 2SK2765-01
FAP-IIS Series
> Features
- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated
> Applications
- Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier
> Maxim |  Fuji Electric | data |
K27 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K270 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below
NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0  Knox Inc diode | | |
| 2 | K2700 | N-Channel MOSFET, 2SK2700 2SK2700
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSIII)
2SK2700
Chopper Regulator, DC–DC Converter and Motor Drive Applications
z Low drain–source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 3.7 Ω (typ.) Unit:  Toshiba Semiconductor data | | |
| 3 | K2711 | N-Channel MOSFET, 2SK2711 www.DataSheet.co.kr
Transistors
Switching (250V, 16A)
2SK2711
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channe  ROHM Semiconductor data | | |
| 4 | K2715 | N-Channel MOSFET, 2SK2715 Transistors
Switching (500V, 2A)
2SK2715
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dim ROHM Semiconductor data | | |
| 5 | K2717 | Silicon N Channel MOS Type Field Effect Transistor 2SK2717
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2717
DC−DC Converter and Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.)
l High forward transfer admittance : |Yfs| = 4.4 S (typ.)
l Low leakage current
: IDSS  Toshiba transistor | | |
| 6 | K2718 | N-Channel MOSFET, 2SK2718 2SK2718
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2718
DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 5.6 Ω (typ.) : |Yfs| = 2.0 S (typ.) U Toshiba Semiconductor data | | |
| 7 | K2719 | N-Channel MOSFET, 2SK2719 2SK2719
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK2719
Chopper Regulator, DC-DC Converter and Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current Toshiba Semiconductor data | |
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| Número de pieza | Descripción | Fabricantes | |
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