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Datasheet 74HC08D Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 74HC08D | Quad 2-input AND gate 74HC08; 74HCT08
Quad 2-input AND gate
Rev. 5 — 30 November 2015
Product data sheet
1. General description
The 74HC08; 74HCT08 is a quad 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
2. Features | NXP Semiconductors | gate |
2 | 74HC08D | high speed CMOS 2-INPUT AND GATE CMOS Digital Integrated Circuits Silicon Monolithic
74HC08D
74HC08D
1. Functional Description
• Quad 2-Input AND Gate
2. General
The 74HC08D is a high speed CMOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while | Toshiba | gate |
3 | 74HC08D-Q100 | Quad 2-input AND gate 74HC08-Q100; 74HCT08-Q100
Quad 2-input AND gate
Rev. 1 — 16 July 2012
Product data sheet
1. General description
The 74HC08-Q100; 7 4HCT08-Q100 is a quad 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess o | NXP Semiconductors | gate |
4 | 74HC08DB | Quad 2-input AND gate 74HC08; 74HCT08
Quad 2-input AND gate
Rev. 5 — 30 November 2015
Product data sheet
1. General description
The 74HC08; 74HCT08 is a quad 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
2. Features | NXP Semiconductors | gate |
74H Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 74H00 | Quad 2-Input NAND Gate Fairchild Semiconductor gate | | |
2 | 74H08 | Quad 2-Input AND Gate ( )
Fairchild Semiconductor gate | | |
3 | 74H08 | Quad 2-Input AND Gate ( )
Signetics gate | | |
4 | 74H106 | SN74H106 ETC data | | |
5 | 74H1G66 | SINGLE BILATERAL SWITCH ®
74H1G66
SINGLE BILATERAL SWITCH
s s
s
s
s
s
HIGH SPEED: tPD = 4 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) LOW ”ON” RESISTANCE RON = 50Ω (TYP.)AT VCC=9V II/O=100µA SINE WAVE DISTORTION 0.042% (TYP.) STMicroelectronics data | | |
6 | 74H1G66S | SINGLE BILATERAL SWITCH ®
74H1G66
SINGLE BILATERAL SWITCH
s s
s
s
s
s
HIGH SPEED: tPD = 4 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) LOW ”ON” RESISTANCE RON = 50Ω (TYP.)AT VCC=9V II/O=100µA SINE WAVE DISTORTION 0.042% (TYP.) STMicroelectronics data | | |
7 | 74H21 | DUAL 4-INPUT POSITIVE AND GATE ETC gate | |
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Número de pieza | Descripción | Fabricantes | |
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