|
|
PDF MTEA2N15L3 Data sheet ( Hoja de datos )
| Número de pieza | MTEA2N15L3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTEA2N15L3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C880L3
Issued Date : 2012.10.03
Revised Date : 2013.10.25
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTEA2N15L3 BVDSS
ID
RDSON@VGS=10V, ID=1.6A
RDSON@VGS=5.5V, ID=1A
Description
150V
3A
125mΩ(typ)
141mΩ(typ)
The MTEA2N15L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Single Drive Requirement
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
Symbol
MTEA2N15L3
Outline
SOT-223
D
G：Gate D：Drain S：Source
S
D
G
Ordering Information
Device
MTEA2N15L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTEA2N15L3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C880L3
Issued Date : 2012.10.03
Revised Date : 2013.10.25
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.6
1.4 ID=250μA
1.2
100 C oss 1
0.8
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
10
1
0.6
0.4
-60
-20 20
60 100
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=75V
8 ID=3A
140
6
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
10 RDS(ON) Limit
1
0.1
TA=25°C, Tj(max)=150°C,
0.01 VGS=10V, RθJA=45°C/W
Single Pulse
10μs
100μs
1ms
10ms
100ms
DC
0.001
0.01
0.1 1
10 100
VDS, Drain-Source Voltage(V)
1000
4
2
0
0 2 4 6 8 10 12 14
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Junction Temperature
3.5
3
2.5
2
1.5
1
0.5 TA=25°C, VGS=10V, RθJA=45°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTEA2N15L3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTEA2N15L3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTEA2N15L3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |