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PDF MTEA0N10J3 Data sheet ( Hoja de datos )
| Número de pieza | MTEA0N10J3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C871J3
Issued Date : 2013.01.03
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTEA0N10J3 BVDSS
ID
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
RDSON(TYP)
VGS=10V, ID=12A
VGS=6V, ID=10A
100V
16A
83mΩ
100mΩ
Equivalent Circuit
MTEA0N10J3
Outline
TO-252AB
TO-252AA
G：Gate D：Drain
S：Source
GDS
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C (Note 1)
Continuous Drain Current @ VGS=10V, TC=100°C (Note 1)
Continuous Drain Current @ VGS=10V, TA=25°C (Note 2)
Continuous Drain Current @ VGS=10V, TA=100°C (Note 2)
Pulsed Drain Current
(Note 3)
Avalanche Current
(Note 3)
Avalanche Energy @ L=0.5mH, ID=11A, RG=25Ω (Note 2)
Repetitive Avalanche Energy@ L=0.1mH
(Note 3)
Total Power Dissipation @TC=25℃
(Note 1)
Total Power Dissipation @TC=100℃ (Note 1)
Total Power Dissipation @TA=25℃
(Note 2)
Total Power Dissipation @TA=70℃
(Note 2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
MTEA0N10J3
Limits
100
±20
16
11
3.7
2.3
64
11
30
6
60
30
2.5
1.6
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C871J3
Issued Date : 2013.01.03
Revised Date :
Page No. : 5/10
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
100 C oss
0.8
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
Limited
10
1
100μs
1ms
10ms
100ms
1s
DC
0.1 TC=25°C, Tj=175°C
VGS=10V, θJC=2.5°C/W
Single Pulse
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
0.6
0.4
-60
10
8
6
-20 20
60 100
Tj, Junction Temperature(°C)
140
Gate Charge Characteristics
VDS=80V
VDS=50V
VDS=20V
4
2 ID=10A
0
0 12 3 45 6
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
20
18
16
14
12
10
8
6
4
2 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTEA0N10J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTEA0N10J3.PDF ] | |
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