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PDF 2SA1015 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1015 | |
| Descripción | PNP Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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1. 2SA1015 ( PNP, Transistor )  Hay una vista previa y un enlace de descarga de 2SA1015 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SOT-23 Plastic-Encapsulate Transistors
2SA1015 TRANSISTOR (PNP)
FEATURES
SOT-23
z High voltage and high current
z Excellent hFE Linearity
z Low niose
z Complementary to 2SC1815
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: BA
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-5
150
200
125
-55-125
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Test conditions
IC= -100u A, IE=0
IC= -0.1mA, IB=0
IE= -100 u A, IC=0
VCB=-50V , IE=0
VCE= -50V , IB=0
VEB=- 5V, IC=0
VCE=-6V, IC= -2mA
IC=-100 mA, IB= -10mA
IC=-100 mA, IB= -10mA
VCE=-10V, IC= -1mA
f=30MHz
MIN TYP
-50
-50
-5
130
80
Units
V
V
V
mA
mW
℃
℃
MAX
-0.1
-0.1
-0.1
400
-0.3
-1.1
UNIT
V
V
V
uA
uA
uA
V
V
MHz
CLASSIFICATION OF hFE
Rank
Range
L
130-200
H
200-400
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SA1015.PDF ] | |
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