(PDF) MMBT5551LT1 Datasheet

Número de pieza	MMBT5551LT1
Descripción	NPN Transistor
Fabricantes	Tuofeng Semiconductor
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No Preview Available ! Shenzhen Tuofeng Semiconductor Technology Co., Ltd. SOT-23 Plastic-Encapsulate Transistors MMBT5551LT1 TRANSISTOR (NPN) FEATURES SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.6 Collector-base voltage A V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 4 1. 3 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) fT Test conditions Ic= 100µA, IE=0 Ic= 0.1mA, IB=0 IE= 100µA, IC=0 VCB=180V, IE=0 VEB= 4V, IC=0 VCE= 5V, IC= 1mA VCE= 5V, IC=10mA VCE= 5V, IC=50mA IC=50 mA, IB= 5mA IC= 50 mA, IB= 5mA VCE=10V, IC= 10mA, f=100MHz MIN MAX UNIT 180 V 160 V 6V 0.1 µA 0.1 µA 80 80 250 30 0.5 V 1V 80 MHz DEVICE MARKING MMBT5551LT1=G1 1 1 page

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