|
|
PDF MMBT5551LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT5551LT1 | |
| Descripción | TRANSISTOR | |
| Fabricantes | WEJ | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MMBT5551LT1 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
RoHS
MMBT5551LT1
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
Collector Dissipation:Pc-225mW(Ta=25o)
.,LTDCollector-Emiller Voltage:VCEO=160V
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
O Unit:mm
CABSOLUTE MAXIMUM RATINGS
ICCharacteristic
Collector-Base Voltage
Collector-Emitter Voltage
NEmitter-Base Voltage
Collector Current
OCollector Dissipation Ta=25oC*
Junction Temperature
RStorage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
180
160
6
600
225
150
-55~150
(Ta=25 oC)
Unit
V
V
V
mA
mW
O
C
OC
TElectrical Characteristics
(Ta=25 oC)
Parameter
Symbol MIN. TYP. MAX. Unit
Condition
CCollector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
EEmitter-Base Breakdown Voltage
LCollector-Base Cutoff Current
Emitter-Base Cutoff Current
EDC Current Gain
DC Current Gain
DC Current Gain
JCollector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
EBase-Emitter Saturation Voltage
WBase-Emitter Saturation Voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
180
160
6
80
80
30
50
50
250
0.5
0.15
1
1
V IC=100 A IE=0
V IC=1mA IB=0
V IE=10 A IC=0
nA VCB=120V, VC=0
nA VCB=4V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=-10mA
VCE=5V, IC=50mA
V IC=50mA, IB=5mA
V IC=10mA, IB=1mA
V IC=50mA, IB=1mA
V IC=10mA, IB=1mA
Current Gain-Bandwidth Product fT 100 300 MHz VCE=10V, IC=10mA,f=100MHz
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC
# Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
2N5551S=Z1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBT5551LT1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MMBT5551LT1 | High Voltage Transistors |  Motorola Semiconductors |
| MMBT5551LT1 | High Voltage Transistors(NPN Silicon) |  ON |
| MMBT5551LT1 | High Voltage Transistors(NPN Silicon) |  Leshan Radio Company |
| MMBT5551LT1 | TRANSISTOR | WEJ |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |