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SBRF2060CT の電気的特性と機能

SBRF2060CTのメーカーはTaiwan Semiconductorです、この部品の機能は「Schottky Barrier Rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 SBRF2060CT
部品説明 Schottky Barrier Rectifiers
メーカ Taiwan Semiconductor
ロゴ Taiwan Semiconductor ロゴ 




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SBRF2060CT Datasheet, SBRF2060CT PDF,ピン配置, 機能
Pb RoHS
COMPLIANCE
Preliminary
SBRF2060CT - SBRF20200CT
Isolation 20.0 AMPS. Schottky Barrier Rectifiers
ITO-220AB
Features
— Plastic material used carries Underwriters Laboratory
Classifications 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High surge capability
— For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
— Guardring for overvoltage protection
— High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
— Cases: ITO-220AB molded plastic
— Terminals: Leads solderable per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position: Any
— Mounting torque: 5 in. - lbs. max
— Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SBRF SBRF SBRF SBRF Units
2060CT 20100CT 20150CT 20200CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TC=135oC
Total device
Per Leg
VRRM 60 100 150 200
VRMS
42
70 105 140
VDC 60 100 150 200
I(AV)
20
10
V
V
V
A
Peak Repetitive Forward Current Per leg (Rated VR,
Square Wave, 20KHz) at Tc=135oC
IFRM
20
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
IFSM
150
A
method )
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
0.5
A
Maximum Instantaneous Forward Voltage at
(Note 2)
IF=10A, Tc=25oC
IF=10A, Tc=125oC
IF=20A, Tc=25oC
IF=20A, Tc=125oC
0.80 0.85 0.95 0.99
VF 0.70 0.75 0.85 0.87 V
0.95 0.95 1.05 1.23
0.85 0.85 0.95 1.10
Maximum Instantaneous Reverse Current @ Tc=25 oC
at Rated DC Blocking Voltage
@ Tc=125 oC
IR
0.1
10 5
0.15
100
mA
Voltage Rate of Change, (Rated VR)
Typical Thermal Resistance Per Leg (Note 3)
Typical Junction Capacitance
dV/dt
RθJC
Cj
10,000
3.5
310
V/uS
oC /W
pF
RMS Isolation Voltage (MBRF Type Only) from
4500 (Note 4)
Terminals to Heatsink with t=1.0 Second, RH 30%
VISO
3500 (Note 5)
1500 (Note 6)
V
Operating Junction Temperature Range
Storage Temperature Range
TJ
TSTG
-65 to +150
-65 to +175
oC
oC
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate
4. Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset.
5. Clip Mounting (on case), where leads do overlap heatsink.
6. Screw Mounting with 4-40 screw, where washer diameter is ≦4.9 mm (0.19”)
Version: B08

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共有リンク

Link :


部品番号部品説明メーカ
SBRF2060CT

Schottky Barrier Rectifiers

Taiwan Semiconductor
Taiwan Semiconductor
SBRF2060CT

Schottky Rectifier ( Diode )

SANGDEST MICROELECTRONICS
SANGDEST MICROELECTRONICS


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