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SBRF2060CTのメーカーはTaiwan Semiconductorです、この部品の機能は「Schottky Barrier Rectifiers」です。 |
部品番号 | SBRF2060CT |
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部品説明 | Schottky Barrier Rectifiers | ||
メーカ | Taiwan Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとSBRF2060CTダウンロード(pdfファイル)リンクがあります。 Total 2 pages
Pb RoHS
COMPLIANCE
Preliminary
SBRF2060CT - SBRF20200CT
Isolation 20.0 AMPS. Schottky Barrier Rectifiers
ITO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AB molded plastic
Terminals: Leads solderable per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SBRF SBRF SBRF SBRF Units
2060CT 20100CT 20150CT 20200CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TC=135oC
Total device
Per Leg
VRRM 60 100 150 200
VRMS
42
70 105 140
VDC 60 100 150 200
I(AV)
20
10
V
V
V
A
Peak Repetitive Forward Current Per leg (Rated VR,
Square Wave, 20KHz) at Tc=135oC
IFRM
20
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
IFSM
150
A
method )
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
0.5
A
Maximum Instantaneous Forward Voltage at
(Note 2)
IF=10A, Tc=25oC
IF=10A, Tc=125oC
IF=20A, Tc=25oC
IF=20A, Tc=125oC
0.80 0.85 0.95 0.99
VF 0.70 0.75 0.85 0.87 V
0.95 0.95 1.05 1.23
0.85 0.85 0.95 1.10
Maximum Instantaneous Reverse Current @ Tc=25 oC
at Rated DC Blocking Voltage
@ Tc=125 oC
IR
0.1
10 5
0.15
100
mA
Voltage Rate of Change, (Rated VR)
Typical Thermal Resistance Per Leg (Note 3)
Typical Junction Capacitance
dV/dt
RθJC
Cj
10,000
3.5
310
V/uS
oC /W
pF
RMS Isolation Voltage (MBRF Type Only) from
4500 (Note 4)
Terminals to Heatsink with t=1.0 Second, RH ≦30%
VISO
3500 (Note 5)
1500 (Note 6)
V
Operating Junction Temperature Range
Storage Temperature Range
TJ
TSTG
-65 to +150
-65 to +175
oC
oC
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate
4. Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset.
5. Clip Mounting (on case), where leads do overlap heatsink.
6. Screw Mounting with 4-40 screw, where washer diameter is ≦4.9 mm (0.19”)
Version: B08
1 Page | |||
ページ | 合計 : 2 ページ | ||
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PDF ダウンロード | [ SBRF2060CT データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
SBRF2060CT | Schottky Barrier Rectifiers | Taiwan Semiconductor |
SBRF2060CT | Schottky Rectifier ( Diode ) | SANGDEST MICROELECTRONICS |