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SMBJ8.5D の電気的特性と機能

SMBJ8.5DのメーカーはVishayです、この部品の機能は「TVS Diode ( Rectifier )」です。


製品の詳細 ( Datasheet PDF )

部品番号 SMBJ8.5D
部品説明 TVS Diode ( Rectifier )
メーカ Vishay
ロゴ Vishay ロゴ 




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SMBJ8.5D Datasheet, SMBJ8.5D PDF,ピン配置, 機能
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD
www.vishay.com
Vishay General Semiconductor
Surface Mount TRANSZORB®
Transient Voltage Suppressors
DO-214AA (SMBJ)
PRIMARY CHARACTERISTICS
VBR (uni-directional)
VBR (bi-directional)
VWM (uni-directional)
VWM (bi-directional)
PPPM
PD at TM = 50 °C
PD at TA = 25 °C
TJ max.
Polarity
6.5 V to 228 V
6.5 V to 21.8 V
5.0 V to 188 V
5.0 V to 18 V
600 W
5.0 W
1.0 W
150 °C
Uni-directional, bi-directional
Package
DO-214AA (SMBJ)
DEVICES FOR BI-DIRECTIONAL
APPLICATIONS
For bi-directional devices use CD suffix (e.g. SMBJ5.0CD).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• ± 3.5 %: very tight VBR tolerance
• Low leakage current
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFETs, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
industrial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: for uni-directional types the band denotes cathode
end, no cathode band on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with a 10/1000 μs waveform
Peak pulse current
with a 10/1000 μs waveform
Power dissipation
TM = 50 °C
TA = 25 °C
Operating junction and storage temperature range
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Power dissipation mounted on infinite heatsink
(3) Power dissipation mounted on minimum recommended pad layout
SYMBOL
PPPM (1)
IPPM (1)
PD (2)
PD (3)
TJ, TSTG
VALUE
600
See next table
5.0
1.0
-55 to +150
UNIT
W
A
W
°C
Revision: 26-Aug-15
1 Document Number: 87606
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SMBJ8.5D pdf, ピン配列
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to ambient
RJA (1)
RJA (2)
Typical thermal resistance, junction to mount
RJM
Notes
(1) Mounted on minimum recommended pad layout
(2) Mounted on 5.0 mm x 5.0 mm copper pad area
VALUE
125
100
20
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SMBJ5.0D-M3/H
0.096
H
SMBJ5.0D-M3/I
0.096
I
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 150
tr = 10 μs
TJ = 25 °C
pulse width (td) is de ned
as the point where the peak
current decays to 50 % of IPPM
100 Peak value IPPM
1 Half value - IPP/2
0.2" x 0.2" (5.0 mm x 5.0 mm)
copper pad areas
0.1
10 100 1000
td - Pulse Width (μs)
10 000
Fig. 1 - Peak Pulse Power Rating Curve
50
10/1000 μs waveform
as de ned by R.E.A.
0 td
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
tp - Time (ms)
Fig. 3 - Pulse Waveform
100 10 000
Measured at zero bias
75 1000
50
25
0
0 25 50 75 100 125 150
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
100 Measured at stand-off
voltage, VWM
10
1
1
Uni-directional
Bi-directional
TJ = 25 °C
f = 1.0 MHz
10 100 200
VWM - Reverse Stand-Off Voltage (V)
Fig. 4 - Typical Junction Capacitance
Revision: 26-Aug-15
3 Document Number: 87606
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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共有リンク

Link :


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