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Número de pieza | VIB0003TFJ | |
Descripción | Bus Converter | |
Fabricantes | VICOR Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de VIB0003TFJ (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! VIB0003TFJ
BCMTM
DC to DC
Bus Converter Module
PRELIMINARY DATASHEET
S
C NRTL US
FEATURES
• 352 Vdc – 44 Vdc 325 W Bus Converter Module
• High efficiency (>95%) reduces system power
consumption
• High power density (>1000 W/in3)
reduces power system footprint by >40%
• “Full Chip” V•I Chip package enables surface mount,
low impedance interconnect to system board
• Contains built-in protection features: undervoltage,
overvoltage lockout, overcurrent protection, short
circuit protection, overtemperature protection.
• Provides enable/disable control, internal temperature
monitoring
• ZVS/ZCS Resonant Sine Amplitude Converter topology
• Can be paralleled to create multi-kW arrays
TYPICAL APPLICATIONS
• High End Computing Systems
• Automated Test Equipment
• Telecom Base Stations
• High Density Power Supplies
• Communications Systems
DESCRIPTION
The V•I Chip Bus Converter Module is a high efficiency (>95%)
Sine Amplitude Converter (SAC)TM operating from a 330 to 365
Vdc primary bus to deliver an isolated 41.25 – 45.63 V nominal,
unregulated secondary. The SAC offers a low AC impedance
beyond the bandwidth of most downstream regulators, mean-
ing that input capacitance normally located at the input of a
regulator can be located at the input to the SAC. Since the K
factor of the VIB0003TFJ is 1/8, that capacitance value can be
reduced by a factor of 64x, resulting in savings of board area,
materials and total system cost.
The VIB0003TFJ is provided in a V•I Chip package compatible
with standard pick-and-place and surface mount assembly
processes. The V•I Chip package provides flexible thermal
management through its low junction-to-case and junction-to-
board thermal resistance. With high conversion efficiency the
VIB0003TFJ increases overall system efficiency and lowers
operating costs compared to conventional approaches.
VIN = 330 – 365 V
POUT = 325 W(NOM)
VOUT = 41.25 – 45.63 V (NO LOAD) K = 1/8
TYPICAL APPLICATION
enable / disable
switch
SW1
F1
VIN
C1 1 µF
PC
TM
BCM
+In +Out
-In -Out
PR
PC
TM
IL
PRM
VC
SG
OS
CD
+In +Out
-In -Out
VC
PC
TM
VTM
+In +Out
-In -Out
L
O
A
D
v i c o r p o w e r. c o m
V•I CHIP INC. (A VICOR COMPANY) 25 FRONTAGE RD. ANDOVER, MA 01810 800-735-6200
Rev. 1.2
9/2009
Page 1 of 16
1 page VIB0003TFJ
PRELIMINARY DATASHEET
1.1 APPLICATION CHARACTERISTICS
All specifications are at TJ = 25ºC unless otherwise noted. See associated figures for general trend data.
ATTRIBUTE
No Load Power
Inrush Current Peak
Efficiency (Ambient)
Efficiency (Hot – 100°C)
Output Resistance (-40°C)
Output Resistance (25°C)
Output Resistance (100°C)
Output Voltage Ripple
VOUT Transient (Positive)
VOUT Transient (Negative)
Undervoltage Lockout
Response Time Constant
Output Overcurrent
Response Time Constant
Overvoltage Lockout
Response Time Constant
TM Voltage (Ambient)
SYMBOL
PNL
INR_P
η
η
ROUT
ROUT
ROUT
VOUT_PP
VOUT_TRAN+
VOUT_TRAN-
TUVLO
CONDITIONS / NOTES
VIN = 352 V, PC enabled; See Figure 1
COUT = 100 µF, POUT = 325 W
VIN = 352 V, POUT = 325 W
VIN = 352 V, POUT = 325 W
VIN = 352 V
VIN = 352 V
VIN = 352 V
COUT = 0 uF, POUT = 325 W @ VIN = 352,
VIN = 352 V
IOUT_STEP = 0 TO 7.7 A,
ISLEW >10 A/us; See Figure 11
IOUT_STEP = 7.7 A to 0 A,
ISLEW > 10 A/us; See Figure 12
TOCP
10 < IOCP < 15 A
TOVLO
VTM_AMB
TJ ≅ 27°C
TYP
6.5
2
95.7
95.3
115
140
190
192
3.2
2.8
150
7.5
120
3
UNIT
W
A
%
%
mΩ
mΩ
mΩ
mV
mV
mV
µs
ms
µs
V
v i c o r p o w e r. c o m
V•I CHIP INC. (A VICOR COMPANY) 25 FRONTAGE RD. ANDOVER, MA 01810 800-735-6200
Rev. 1.2
9/2009
Page 5 of 16
5 Page 4.0 OPERATING
VIB0003TFJ
PRELIMINARY DATASHEET
Figure 16 – Timing diagram
v i c o r p o w e r. c o m
V•I CHIP INC. (A VICOR COMPANY) 25 FRONTAGE RD. ANDOVER, MA 01810 800-735-6200
Rev. 1.2
9/2009
Page 11 of 16
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet VIB0003TFJ.PDF ] |
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