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PDF 2SK635 Data sheet ( Hoja de datos )
| Número de pieza | 2SK635 | |
| Descripción | N-Channel MOSFET Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
FEATURES
·Drain Current –ID=3A@ TC=25℃
·Drain Source Voltage-
: VDSS= 500V(Min)
isc Product Specification
2SK635
DESCRIPTION
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
500 V
±20
V
3A
40 W
150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.25
62.5
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SK635.PDF ] | |
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