2SK632 Datasheet PDF - Inchange Semiconductor
| Part Number | 2SK632 | |
| Description | N-Channel MOSFET Transistor | |
| Manufacturers | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
FEATURES
·Drain Current –ID=5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
isc Product Specification
2SK632
DESCRIPTION
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
200
±20
V
V
5A
40
150
-55~150
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.25
62.5
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SK632 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2SK632.PDF Datasheet ] | |
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