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IRF100B202 の電気的特性と機能

IRF100B202のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF100B202
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF100B202 Datasheet, IRF100B202 PDF,ピン配置, 機能
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
StrongIRFET™
IRF100B202
HEXFET® Power MOSFET
  D VDSS 100V
RDS(on) typ.
7.2m
G
max
8.6m
IS
D (Silicon Limited)
97A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
G
Gate
Base part number
IRF100B202
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
GDS
TO-220AB
IRF100B202
D
Drain
S
Source
Orderable Part Number
IRF100B202
25
ID = 58A
20
TJ = 125°C
15
10 TJ = 25°C
5
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On– Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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IRF100B202 pdf, ピン配列
  IRF100B202
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Coss eff.(TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Min.
123
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
77
20
23
54
11
56
55
58
4476
319
154
355
385
Max. Units
Conditions
––– S VDS = 10V, ID =58A
116 ID = 58A
–––
–––
nC
 VVDGSS
=
=
50V
10V
–––
––– VDD = 65V
–––
–––
ns
ID = 58A
RG= 2.7
––– VGS = 10V
––– VGS = 0V
––– VDS = 50V
––– pF   ƒ = 1.0MHz, See Fig.5
––– VGS = 0V, VDS = 0V to 80V
––– VGS = 0V, VDS = 0V to 80V
Diode Characteristics  
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
97
380
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
VSD
dv/dt
trr
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.3 V TJ = 25°C,IS = 58A,VGS = 0V 
––– 28 ––– V/ns TJ = 175°C,IS =58A,VDS = 100V
–––
–––
51
58
–––
–––
ns
TJ = 25°C
TJ = 125°C
VDD = 85V
IF = 58A,
–––
–––
105
133
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs 
 
––– 3.7 ––– A TJ = 25°C
3 www.irf.com © 2014 International Rectifier
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IRF100B202 電子部品, 半導体
 
1
IRF100B202
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
100
0.01
10 0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 15. Avalanche Current vs. Pulse Width
200
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 58A
150
100
50
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav  
6 www.irf.com © 2014 International Rectifier
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部品番号部品説明メーカ
IRF100B201

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
IRF100B202

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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