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GB01SHT06-CAU の電気的特性と機能

GB01SHT06-CAUのメーカーはGeneSiCです、この部品の機能は「High Temperature Silicon Carbide Power Schottky Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 GB01SHT06-CAU
部品説明 High Temperature Silicon Carbide Power Schottky Diode
メーカ GeneSiC
ロゴ GeneSiC ロゴ 




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GB01SHT06-CAU Datasheet, GB01SHT06-CAU PDF,ピン配置, 機能
 
High Temperature Silicon Carbide
Power Schottky Diode
Features
650 V Schottky rectifier
210 °C maximum operating temperature
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of VF
Temperature independent switching behavior
Lowest figure of merit QC/IF
Available screened to Mil-PRF-19500
Die Datasheet
GB01SHT06-CAU  
VRRM
IF @ 25 oC
QC
= 650 V
= 2.5 A
= 7 nC
 
Die Size = 0.9 mm x 0.9 mm
Advantages
High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I2t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF
IF(RMS)
IF,SM
IF,max
∫i2 dt
Ptot
Tj , Tstg
TC = 25 °C, RthJC = 9.52
TC ≤ 190 °C, RthJC = 9.52
TC ≤ 190 °C, RthJC = 9.52
TC = 25 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C, RthJC = 9.52
Values
650
2.5
0.75
1.3
10
65
0.5
24
-55 to 210
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
VF
IF = 0.75 A, Tj = 25 °C
IF = 0.75 A, Tj = 210 °C
IR
VR = 650 V, Tj = 25 °C
VR = 650 V, Tj = 210 °C
QC
ts
IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 210 °C
VR = 400 V
VR = 400 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
C VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 650 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.4
2.3
1
5
7
< 17
76
12
12
max.
5
50
Unit
V
A
A
A
A
A
A2S
W
°C
Unit
V
µA
nC
ns
pF
Feb 2015
 
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ 
Pg1 of 4

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GB01SHT06-CAU pdf, ピン配列
 
Mechanical Parameters
Die Dimensions
Anode pad size
Die Area total / active
Die Thickness
Wafer Size
Flat Position
Die Frontside Passivation
Anode Pad Metallization
Backside Cathode Metallization
Die Attach
Wire Bond
Reject ink dot size
Recommended storage environment
Chip Dimensions:
Die Datasheet
GB01SHT06-CAU  
0.9 x 0.9
0.64 x 0.64
mm2
0.81/0.36
360 µm
100 mm
0 deg
Polyimide
400 nm Ni + 200 nm Au
400 nm Ni + 200 nm Au
Electrically conductive glue or solder
Au ≤ 76 µm
Φ ≥ 0.3 mm
Store in original container, in dry nitrogen,
< 6 months at an ambient temperature of 23 °C
DIE
METAL
WIRE
BONDABLE
A
[mm]
B
[mm]
C
[mm]
D
[mm]
E
[mm]
F
[mm]
0.9
0.9
0.64
0.64
0.6
0.6
Feb 2015
 
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ 
Pg3 of 4


3Pages





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共有リンク

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部品番号部品説明メーカ
GB01SHT06-CAL

High Temperature Silicon Carbide Power Schottky Diode

GeneSiC
GeneSiC
GB01SHT06-CAU

High Temperature Silicon Carbide Power Schottky Diode

GeneSiC
GeneSiC


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